FR2202367A1 - - Google Patents

Info

Publication number
FR2202367A1
FR2202367A1 FR7335129A FR7335129A FR2202367A1 FR 2202367 A1 FR2202367 A1 FR 2202367A1 FR 7335129 A FR7335129 A FR 7335129A FR 7335129 A FR7335129 A FR 7335129A FR 2202367 A1 FR2202367 A1 FR 2202367A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7335129A
Other languages
French (fr)
Other versions
FR2202367B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2202367A1 publication Critical patent/FR2202367A1/fr
Application granted granted Critical
Publication of FR2202367B1 publication Critical patent/FR2202367B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
FR7335129A 1972-10-04 1973-10-02 Expired FR2202367B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47099060A JPS5218070B2 (en) 1972-10-04 1972-10-04

Publications (2)

Publication Number Publication Date
FR2202367A1 true FR2202367A1 (en) 1974-05-03
FR2202367B1 FR2202367B1 (en) 1977-09-09

Family

ID=14237161

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7335129A Expired FR2202367B1 (en) 1972-10-04 1973-10-02

Country Status (6)

Country Link
US (1) US4000507A (en)
JP (1) JPS5218070B2 (en)
DE (1) DE2349938A1 (en)
FR (1) FR2202367B1 (en)
GB (1) GB1444823A (en)
NL (1) NL7313366A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454702A1 (en) * 1979-04-19 1980-11-14 Philips Nv SEMICONDUCTOR DEVICE, IN PARTICULAR DIODE, TRANSISTOR, THYRISTOR COMPRISING IMPROVED PASSIVATION MEANS
EP0075331A2 (en) * 1981-09-23 1983-03-30 Siemens Aktiengesellschaft Device for compensating corrosion effects in integrated semiconductor circuits

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181667U (en) * 1974-12-23 1976-06-30
DE2603747A1 (en) * 1976-01-31 1977-08-04 Licentia Gmbh INTEGRATED CIRCUIT ARRANGEMENT
US4047196A (en) * 1976-08-24 1977-09-06 Rca Corporation High voltage semiconductor device having a novel edge contour
JPS5347096U (en) * 1976-09-24 1978-04-21
JPS53103756U (en) * 1977-01-26 1978-08-21
JPS54149469A (en) * 1978-05-16 1979-11-22 Toshiba Corp Semiconductor device
GB2080616A (en) * 1980-07-21 1982-02-03 Siliconix Inc Power semiconductor devices
JPS5987316A (en) * 1982-11-10 1984-05-19 Kawaguchiko Seimitsu Kk Digital measuring instrument
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
DE19517975B4 (en) * 1994-07-12 2007-02-08 International Rectifier Corp., El Segundo CMOS circuit chips with polysilicon field ring structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
DE1920397A1 (en) * 1969-04-22 1970-11-12 Siemens Ag Stabilized semiconductor component

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages
US3713908A (en) * 1970-05-15 1973-01-30 Ibm Method of fabricating lateral transistors and complementary transistors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
DE1920397A1 (en) * 1969-04-22 1970-11-12 Siemens Ag Stabilized semiconductor component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454702A1 (en) * 1979-04-19 1980-11-14 Philips Nv SEMICONDUCTOR DEVICE, IN PARTICULAR DIODE, TRANSISTOR, THYRISTOR COMPRISING IMPROVED PASSIVATION MEANS
EP0075331A2 (en) * 1981-09-23 1983-03-30 Siemens Aktiengesellschaft Device for compensating corrosion effects in integrated semiconductor circuits
EP0075331A3 (en) * 1981-09-23 1985-03-20 Siemens Aktiengesellschaft Device for compensating corrosion effects in integrated semiconductor circuits

Also Published As

Publication number Publication date
JPS5218070B2 (en) 1977-05-19
US4000507A (en) 1976-12-28
FR2202367B1 (en) 1977-09-09
GB1444823A (en) 1976-08-04
NL7313366A (en) 1974-04-08
DE2349938A1 (en) 1974-04-25
JPS4958769A (en) 1974-06-07

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Legal Events

Date Code Title Description
ST Notification of lapse