FR2200625A1 - - Google Patents
Info
- Publication number
- FR2200625A1 FR2200625A1 FR7333797A FR7333797A FR2200625A1 FR 2200625 A1 FR2200625 A1 FR 2200625A1 FR 7333797 A FR7333797 A FR 7333797A FR 7333797 A FR7333797 A FR 7333797A FR 2200625 A1 FR2200625 A1 FR 2200625A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H01L29/36—
-
- H01L29/00—
-
- H01L29/0821—
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29097672A | 1972-09-21 | 1972-09-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2200625A1 true FR2200625A1 (it) | 1974-04-19 |
| FR2200625B1 FR2200625B1 (it) | 1979-08-31 |
Family
ID=23118293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7333797A Expired FR2200625B1 (it) | 1972-09-21 | 1973-09-20 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4971873A (it) |
| BE (1) | BE804932A (it) |
| CA (1) | CA978281A (it) |
| DE (1) | DE2347067A1 (it) |
| FR (1) | FR2200625B1 (it) |
| GB (1) | GB1414066A (it) |
| IT (1) | IT993337B (it) |
| NL (1) | NL7312775A (it) |
| SE (1) | SE391606B (it) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2543736A1 (fr) * | 1983-03-31 | 1984-10-05 | Thomson Csf | Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2559800B2 (ja) * | 1988-03-25 | 1996-12-04 | 株式会社宇宙通信基礎技術研究所 | トランジスタの評価方法 |
-
1973
- 1973-03-30 CA CA167,643A patent/CA978281A/en not_active Expired
- 1973-09-11 SE SE7312357A patent/SE391606B/xx unknown
- 1973-09-17 GB GB4346773A patent/GB1414066A/en not_active Expired
- 1973-09-17 BE BE135714A patent/BE804932A/xx unknown
- 1973-09-17 NL NL7312775A patent/NL7312775A/xx not_active Application Discontinuation
- 1973-09-19 DE DE19732347067 patent/DE2347067A1/de active Pending
- 1973-09-20 FR FR7333797A patent/FR2200625B1/fr not_active Expired
- 1973-09-20 IT IT2917773A patent/IT993337B/it active
- 1973-09-21 JP JP10607473A patent/JPS4971873A/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| NEANT * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2543736A1 (fr) * | 1983-03-31 | 1984-10-05 | Thomson Csf | Procede de fabrication d'un transistor de puissance a tenue en tension elevee a l'ouverture |
| EP0127488A2 (fr) * | 1983-03-31 | 1984-12-05 | Thomson-Csf | Procédé de fabrication d'un transistor de puissance à tenue en tension élevée à l'ouverture |
| EP0127488A3 (en) * | 1983-03-31 | 1986-01-22 | Thomson-Csf | Method of making a power transistor with open circuit voltage holding properties |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2200625B1 (it) | 1979-08-31 |
| CA978281A (en) | 1975-11-18 |
| IT993337B (it) | 1975-09-30 |
| GB1414066A (en) | 1975-11-12 |
| DE2347067A1 (de) | 1974-03-28 |
| JPS4971873A (it) | 1974-07-11 |
| BE804932A (fr) | 1974-01-16 |
| SE391606B (sv) | 1977-02-21 |
| NL7312775A (it) | 1974-03-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |