FR2193656A1 - Metal alloy monocrystal extractor - with independent electrical heaters for liq seal, volatile component evaporator and fusion crucible - Google Patents

Metal alloy monocrystal extractor - with independent electrical heaters for liq seal, volatile component evaporator and fusion crucible

Info

Publication number
FR2193656A1
FR2193656A1 FR7226712A FR7226712A FR2193656A1 FR 2193656 A1 FR2193656 A1 FR 2193656A1 FR 7226712 A FR7226712 A FR 7226712A FR 7226712 A FR7226712 A FR 7226712A FR 2193656 A1 FR2193656 A1 FR 2193656A1
Authority
FR
France
Prior art keywords
liq
crucible
seal
extractor
volatile component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7226712A
Other languages
French (fr)
Other versions
FR2193656B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7226712A priority Critical patent/FR2193656A1/en
Publication of FR2193656A1 publication Critical patent/FR2193656A1/en
Application granted granted Critical
Publication of FR2193656B1 publication Critical patent/FR2193656B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Abstract

An electroluminescent or transistor monocrystal (esp. of As/Ga or In/P) is withdrawn from an alloy (one component of which is volatile at the fusion temp), within a crucible having a liq. seal to an outer chamber, pref. maintained at a higher press. by an inert gas. Verticle shafts carrying crystal seed and crucible may both be reciprocated and rotated, and independent heaters permit control of volatile component evapn., and viscosity of liq. sealant. Contamination of alloy with sealant is avoided, and crucible may be dismantled and re-used. Rotation of crucible improves homogeneity of alloy.
FR7226712A 1972-07-25 1972-07-25 Metal alloy monocrystal extractor - with independent electrical heaters for liq seal, volatile component evaporator and fusion crucible Granted FR2193656A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7226712A FR2193656A1 (en) 1972-07-25 1972-07-25 Metal alloy monocrystal extractor - with independent electrical heaters for liq seal, volatile component evaporator and fusion crucible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7226712A FR2193656A1 (en) 1972-07-25 1972-07-25 Metal alloy monocrystal extractor - with independent electrical heaters for liq seal, volatile component evaporator and fusion crucible

Publications (2)

Publication Number Publication Date
FR2193656A1 true FR2193656A1 (en) 1974-02-22
FR2193656B1 FR2193656B1 (en) 1974-10-31

Family

ID=9102317

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7226712A Granted FR2193656A1 (en) 1972-07-25 1972-07-25 Metal alloy monocrystal extractor - with independent electrical heaters for liq seal, volatile component evaporator and fusion crucible

Country Status (1)

Country Link
FR (1) FR2193656A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0138292A1 (en) * 1983-08-06 1985-04-24 Sumitomo Electric Industries Limited Apparatus for the growth of single crystals
EP0559921A1 (en) * 1991-09-19 1993-09-15 Mitsubishi Materials Corporation Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0138292A1 (en) * 1983-08-06 1985-04-24 Sumitomo Electric Industries Limited Apparatus for the growth of single crystals
EP0559921A1 (en) * 1991-09-19 1993-09-15 Mitsubishi Materials Corporation Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound
EP0559921A4 (en) * 1991-09-19 1995-11-22 Mitsubishi Materials Corp Apparatus for and method of producing single crystal semiconductor of high dissociation pressure compound

Also Published As

Publication number Publication date
FR2193656B1 (en) 1974-10-31

Similar Documents

Publication Publication Date Title
GB1477583A (en) Plasma panel display device
GB1286024A (en) Method of producing single semiconductor crystals
FR2193656A1 (en) Metal alloy monocrystal extractor - with independent electrical heaters for liq seal, volatile component evaporator and fusion crucible
GB1033857A (en) Ferromagnetic single crystals
US3305313A (en) Method of producing gallium phosphide in crystalline form
GB1058968A (en) Method for preparing crystals of rare earth chalcogenides
GB1065728A (en) Improvements in or relating to the preparation of group b and vb compound crystals
GB682203A (en) Process for growing a single crystal of quartz
US2990259A (en) Syringe-type single-crystal furnace
DE59305370D1 (en) Process for the production of elements for thermal insulation and elements produced by the process
GB1268253A (en) Improvements in or relating to arc furnaces
ES365930A1 (en) Crystals, in particular crystal whiskers and objects comprising such crystals
GB1482016A (en) Epitaxial deposition of semiconductor material
FR2213802A1 (en) Liquid phase epitaxis - for producing e.g. electroluminescent junctions in a monocrystal semiconductor
FR2079493A5 (en) Seeded solution growth - of single crystal compound semiconductors
JPS5490086A (en) Method of producing single crystal
SU487032A1 (en) The method of connecting Kovar with glass
GB1487333A (en) Method for vapour growing crystals
JPS6445799A (en) Production of cadmium telluride based crystal
JPS5562900A (en) Heat treating method for zinc sulfide single crystal
SU120330A1 (en) Method for homogenizing solid solutions of indium arsenide - indium selenide
SU424818A1 (en) METHOD OF OBTAINING TUNGSTATE TWO-HEADS
JPS53130054A (en) Orientation treatment method of liquid crystal cells
JPS6435811A (en) Manufacture of oxide superconducting membrane
GB1137560A (en) Method of heating materials

Legal Events

Date Code Title Description
ST Notification of lapse