FR2192870A1 - - Google Patents

Info

Publication number
FR2192870A1
FR2192870A1 FR7325560A FR7325560A FR2192870A1 FR 2192870 A1 FR2192870 A1 FR 2192870A1 FR 7325560 A FR7325560 A FR 7325560A FR 7325560 A FR7325560 A FR 7325560A FR 2192870 A1 FR2192870 A1 FR 2192870A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7325560A
Other languages
French (fr)
Other versions
FR2192870B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2192870A1 publication Critical patent/FR2192870A1/fr
Application granted granted Critical
Publication of FR2192870B1 publication Critical patent/FR2192870B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/004—Sight-glasses therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
FR7325560A 1972-07-13 1973-07-12 Expired FR2192870B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2234512A DE2234512C3 (de) 1972-07-13 1972-07-13 Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand

Publications (2)

Publication Number Publication Date
FR2192870A1 true FR2192870A1 (de) 1974-02-15
FR2192870B1 FR2192870B1 (de) 1977-12-23

Family

ID=5850582

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7325560A Expired FR2192870B1 (de) 1972-07-13 1973-07-12

Country Status (10)

Country Link
US (1) US3915660A (de)
JP (1) JPS4953372A (de)
BE (1) BE802326A (de)
CA (1) CA1016847A (de)
DE (1) DE2234512C3 (de)
DK (1) DK143457C (de)
FR (1) FR2192870B1 (de)
GB (1) GB1375132A (de)
IT (1) IT992613B (de)
NL (1) NL7305060A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159967A (de) * 1974-06-17 1975-12-24
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
JPS61117200A (ja) * 1984-11-13 1986-06-04 Alps Electric Co Ltd 酸化テルルウイスカ−およびその製造方法
US6452211B1 (en) 1997-06-10 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
EP1088912A1 (de) * 1999-09-28 2001-04-04 Forschungsverbund Berlin e.V. Züchtung von Verbindungs- oder Legierungskristallen in einer Lösung einer tiegelfreier Zonenschmelze

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL243511A (de) * 1959-09-18
NL244489A (de) * 1959-10-19
NL301226A (de) * 1962-12-03
DE1218404B (de) * 1964-02-01 1966-06-08 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
BE684801A (de) * 1965-08-05 1967-01-03

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
FR2192870B1 (de) 1977-12-23
DK143457C (da) 1981-12-28
DE2234512A1 (de) 1974-01-24
GB1375132A (de) 1974-11-27
CA1016847A (en) 1977-09-06
DE2234512C3 (de) 1979-04-19
IT992613B (it) 1975-09-30
DK143457B (da) 1981-08-24
JPS4953372A (de) 1974-05-23
BE802326A (fr) 1973-11-05
DE2234512B2 (de) 1978-08-24
US3915660A (en) 1975-10-28
NL7305060A (de) 1974-01-15

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Legal Events

Date Code Title Description
ST Notification of lapse