FR2192379B1 - - Google Patents

Info

Publication number
FR2192379B1
FR2192379B1 FR7224928A FR7224928A FR2192379B1 FR 2192379 B1 FR2192379 B1 FR 2192379B1 FR 7224928 A FR7224928 A FR 7224928A FR 7224928 A FR7224928 A FR 7224928A FR 2192379 B1 FR2192379 B1 FR 2192379B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7224928A
Other languages
French (fr)
Other versions
FR2192379A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7224928A priority Critical patent/FR2192379B1/fr
Priority to DE19732334417 priority patent/DE2334417A1/de
Priority to CA175,884A priority patent/CA1009354A/en
Priority to GB3220773A priority patent/GB1431715A/en
Priority to US377797A priority patent/US3928866A/en
Priority to JP48077160A priority patent/JPS4946380A/ja
Publication of FR2192379A1 publication Critical patent/FR2192379A1/fr
Application granted granted Critical
Publication of FR2192379B1 publication Critical patent/FR2192379B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
FR7224928A 1972-07-10 1972-07-10 Expired FR2192379B1 (enExample)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7224928A FR2192379B1 (enExample) 1972-07-10 1972-07-10
DE19732334417 DE2334417A1 (de) 1972-07-10 1973-07-06 Halbleiterstrahlungsdetektor und verfahren zu dessen herstellung
CA175,884A CA1009354A (en) 1972-07-10 1973-07-06 Semiconductor radiation detector and method of manufacturing same
GB3220773A GB1431715A (en) 1972-07-10 1973-07-06 Semiconductor radiation detector and method of manufacturing same procedure for increasing the chemisorption capacity of carbon with regard to gases
US377797A US3928866A (en) 1972-07-10 1973-07-09 Semiconductor radiation detector and method of manufacturing same
JP48077160A JPS4946380A (enExample) 1972-07-10 1973-07-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7224928A FR2192379B1 (enExample) 1972-07-10 1972-07-10

Publications (2)

Publication Number Publication Date
FR2192379A1 FR2192379A1 (enExample) 1974-02-08
FR2192379B1 true FR2192379B1 (enExample) 1977-07-22

Family

ID=9101605

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7224928A Expired FR2192379B1 (enExample) 1972-07-10 1972-07-10

Country Status (6)

Country Link
US (1) US3928866A (enExample)
JP (1) JPS4946380A (enExample)
CA (1) CA1009354A (enExample)
DE (1) DE2334417A1 (enExample)
FR (1) FR2192379B1 (enExample)
GB (1) GB1431715A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990097A (en) * 1975-09-18 1976-11-02 Solarex Corporation Silicon solar energy cell having improved back contact and method forming same
US4163240A (en) * 1977-03-21 1979-07-31 The Harshaw Chemical Company Sensitive silicon pin diode fast neutron dosimeter
US4485389A (en) * 1978-03-08 1984-11-27 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4328508A (en) * 1979-04-02 1982-05-04 Rca Corporation III-V Quaternary alloy photodiode
GB2151843A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
KR100528331B1 (ko) * 2003-02-25 2005-11-16 삼성전자주식회사 수광소자 및 그 제조방법 및 이를 적용한 광전자 집적 회로
KR101148335B1 (ko) * 2009-07-23 2012-05-21 삼성전기주식회사 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀
KR20110068070A (ko) * 2009-12-15 2011-06-22 삼성전기주식회사 실리콘 광전자 증배 소자를 이용한 저조도용 촬영 장치
CN102569487B (zh) * 2012-01-17 2014-05-28 北京大学 硅pin中子剂量探测器及其制作方法
CN102544186B (zh) * 2012-01-17 2014-04-16 北京大学 一种硅pin中子剂量探测器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3593067A (en) * 1967-08-07 1971-07-13 Honeywell Inc Semiconductor radiation sensor
US3742215A (en) * 1970-01-26 1973-06-26 Philips Corp Method and apparatus for a semiconductor radiation detector
JPS529117B1 (enExample) * 1970-01-26 1977-03-14

Also Published As

Publication number Publication date
GB1431715A (en) 1976-04-14
DE2334417A1 (de) 1974-01-24
CA1009354A (en) 1977-04-26
US3928866A (en) 1975-12-23
FR2192379A1 (enExample) 1974-02-08
JPS4946380A (enExample) 1974-05-02

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Legal Events

Date Code Title Description
ST Notification of lapse