CA1009354A - Semiconductor radiation detector and method of manufacturing same - Google Patents
Semiconductor radiation detector and method of manufacturing sameInfo
- Publication number
- CA1009354A CA1009354A CA175,884A CA175884A CA1009354A CA 1009354 A CA1009354 A CA 1009354A CA 175884 A CA175884 A CA 175884A CA 1009354 A CA1009354 A CA 1009354A
- Authority
- CA
- Canada
- Prior art keywords
- radiation detector
- manufacturing same
- semiconductor radiation
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
- H10F30/2925—Li-compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7224928A FR2192379B1 (enExample) | 1972-07-10 | 1972-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1009354A true CA1009354A (en) | 1977-04-26 |
Family
ID=9101605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA175,884A Expired CA1009354A (en) | 1972-07-10 | 1973-07-06 | Semiconductor radiation detector and method of manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3928866A (enExample) |
| JP (1) | JPS4946380A (enExample) |
| CA (1) | CA1009354A (enExample) |
| DE (1) | DE2334417A1 (enExample) |
| FR (1) | FR2192379B1 (enExample) |
| GB (1) | GB1431715A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3990097A (en) * | 1975-09-18 | 1976-11-02 | Solarex Corporation | Silicon solar energy cell having improved back contact and method forming same |
| US4163240A (en) * | 1977-03-21 | 1979-07-31 | The Harshaw Chemical Company | Sensitive silicon pin diode fast neutron dosimeter |
| US4485389A (en) * | 1978-03-08 | 1984-11-27 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| US4328508A (en) * | 1979-04-02 | 1982-05-04 | Rca Corporation | III-V Quaternary alloy photodiode |
| GB2151843A (en) * | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
| KR100528331B1 (ko) * | 2003-02-25 | 2005-11-16 | 삼성전자주식회사 | 수광소자 및 그 제조방법 및 이를 적용한 광전자 집적 회로 |
| KR101148335B1 (ko) * | 2009-07-23 | 2012-05-21 | 삼성전기주식회사 | 실리콘 반도체를 이용한 광전자 증배관 및 그 구조 셀 |
| KR20110068070A (ko) * | 2009-12-15 | 2011-06-22 | 삼성전기주식회사 | 실리콘 광전자 증배 소자를 이용한 저조도용 촬영 장치 |
| CN102569487B (zh) * | 2012-01-17 | 2014-05-28 | 北京大学 | 硅pin中子剂量探测器及其制作方法 |
| CN102544186B (zh) * | 2012-01-17 | 2014-04-16 | 北京大学 | 一种硅pin中子剂量探测器及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3413528A (en) * | 1966-03-03 | 1968-11-26 | Atomic Energy Commission Usa | Lithium drifted semiconductor radiation detector |
| US3593067A (en) * | 1967-08-07 | 1971-07-13 | Honeywell Inc | Semiconductor radiation sensor |
| US3742215A (en) * | 1970-01-26 | 1973-06-26 | Philips Corp | Method and apparatus for a semiconductor radiation detector |
| JPS529117B1 (enExample) * | 1970-01-26 | 1977-03-14 |
-
1972
- 1972-07-10 FR FR7224928A patent/FR2192379B1/fr not_active Expired
-
1973
- 1973-07-06 CA CA175,884A patent/CA1009354A/en not_active Expired
- 1973-07-06 DE DE19732334417 patent/DE2334417A1/de active Pending
- 1973-07-06 GB GB3220773A patent/GB1431715A/en not_active Expired
- 1973-07-09 US US377797A patent/US3928866A/en not_active Expired - Lifetime
- 1973-07-10 JP JP48077160A patent/JPS4946380A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1431715A (en) | 1976-04-14 |
| DE2334417A1 (de) | 1974-01-24 |
| FR2192379B1 (enExample) | 1977-07-22 |
| US3928866A (en) | 1975-12-23 |
| FR2192379A1 (enExample) | 1974-02-08 |
| JPS4946380A (enExample) | 1974-05-02 |
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