FR2186699B1 - - Google Patents
Info
- Publication number
- FR2186699B1 FR2186699B1 FR7236799A FR7236799A FR2186699B1 FR 2186699 B1 FR2186699 B1 FR 2186699B1 FR 7236799 A FR7236799 A FR 7236799A FR 7236799 A FR7236799 A FR 7236799A FR 2186699 B1 FR2186699 B1 FR 2186699B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
- H03K17/6221—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
- H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19791071A | 1971-11-11 | 1971-11-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2186699A1 FR2186699A1 (fr) | 1974-01-11 |
FR2186699B1 true FR2186699B1 (fr) | 1976-01-30 |
Family
ID=22731233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7236799A Expired FR2186699B1 (fr) | 1971-11-11 | 1972-10-11 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3736573A (fr) |
JP (1) | JPS5321623B2 (fr) |
CA (1) | CA979527A (fr) |
DE (1) | DE2246756C3 (fr) |
FR (1) | FR2186699B1 (fr) |
GB (1) | GB1369726A (fr) |
IT (1) | IT969826B (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52144238A (en) * | 1976-05-27 | 1977-12-01 | Toshiba Corp | Semiconductor memory circuit |
JPS5639335U (fr) * | 1979-09-04 | 1981-04-13 | ||
DE3004565C2 (de) * | 1980-02-07 | 1984-06-14 | Siemens AG, 1000 Berlin und 8000 München | Integrierte digitale Halbleiterschaltung |
US5241503A (en) * | 1991-02-25 | 1993-08-31 | Motorola, Inc. | Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3405399A (en) * | 1964-06-16 | 1968-10-08 | Sperry Rand Corp | Matrix selection circuit |
US3363115A (en) * | 1965-03-29 | 1968-01-09 | Gen Micro Electronics Inc | Integral counting circuit with storage capacitors in the conductive path of steering gate circuits |
US3423737A (en) * | 1965-06-21 | 1969-01-21 | Ibm | Nondestructive read transistor memory cell |
US3537078A (en) * | 1968-07-11 | 1970-10-27 | Ibm | Memory cell with a non-linear collector load |
US3609712A (en) * | 1969-01-15 | 1971-09-28 | Ibm | Insulated gate field effect transistor memory array |
US3617772A (en) * | 1969-07-09 | 1971-11-02 | Ibm | Sense amplifier/bit driver for a memory cell |
DE2002708C3 (de) * | 1970-01-22 | 1978-09-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Speicheranordnung mit bistabilen Kippschaltungen |
US3636377A (en) * | 1970-07-21 | 1972-01-18 | Semi Conductor Electronic Memo | Bipolar semiconductor random access memory |
-
1971
- 1971-11-11 US US00197910A patent/US3736573A/en not_active Expired - Lifetime
-
1972
- 1972-09-23 DE DE2246756A patent/DE2246756C3/de not_active Expired
- 1972-10-11 FR FR7236799A patent/FR2186699B1/fr not_active Expired
- 1972-10-19 GB GB4816972A patent/GB1369726A/en not_active Expired
- 1972-10-24 IT IT30832/72A patent/IT969826B/it active
- 1972-10-25 JP JP10634572A patent/JPS5321623B2/ja not_active Expired
- 1972-11-08 CA CA156,034A patent/CA979527A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2186699A1 (fr) | 1974-01-11 |
DE2246756C3 (de) | 1982-04-01 |
CA979527A (en) | 1975-12-09 |
DE2246756A1 (de) | 1973-05-17 |
DE2246756B2 (de) | 1981-07-16 |
JPS5321623B2 (fr) | 1978-07-04 |
US3736573A (en) | 1973-05-29 |
GB1369726A (en) | 1974-10-09 |
JPS4859741A (fr) | 1973-08-22 |
IT969826B (it) | 1974-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |