FR2183882A1 - - Google Patents

Info

Publication number
FR2183882A1
FR2183882A1 FR7316371A FR7316371A FR2183882A1 FR 2183882 A1 FR2183882 A1 FR 2183882A1 FR 7316371 A FR7316371 A FR 7316371A FR 7316371 A FR7316371 A FR 7316371A FR 2183882 A1 FR2183882 A1 FR 2183882A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7316371A
Other languages
French (fr)
Other versions
FR2183882B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Publication of FR2183882A1 publication Critical patent/FR2183882A1/fr
Application granted granted Critical
Publication of FR2183882B1 publication Critical patent/FR2183882B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels
    • H10D30/684Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
FR7316371A 1972-05-08 1973-05-07 Expired FR2183882B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25110572A 1972-05-08 1972-05-08

Publications (2)

Publication Number Publication Date
FR2183882A1 true FR2183882A1 (OSRAM) 1973-12-21
FR2183882B1 FR2183882B1 (OSRAM) 1977-09-02

Family

ID=22950499

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7316371A Expired FR2183882B1 (OSRAM) 1972-05-08 1973-05-07

Country Status (5)

Country Link
JP (1) JPS5122349B2 (OSRAM)
CA (1) CA974658A (OSRAM)
FR (1) FR2183882B1 (OSRAM)
GB (1) GB1374231A (OSRAM)
NL (1) NL7306345A (OSRAM)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2129181A1 (de) * 1970-06-15 1971-12-23 Intel Corp Festkörper-Speichervorrichtung mit schwebender Gate-Elektrode
FR2147308A1 (OSRAM) * 1971-07-28 1973-03-09 Philips Nv

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040991B2 (OSRAM) * 1971-09-09 1975-12-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2129181A1 (de) * 1970-06-15 1971-12-23 Intel Corp Festkörper-Speichervorrichtung mit schwebender Gate-Elektrode
FR2147308A1 (OSRAM) * 1971-07-28 1973-03-09 Philips Nv

Also Published As

Publication number Publication date
DE2322490A1 (de) 1973-11-22
JPS5122349B2 (OSRAM) 1976-07-09
JPS4956594A (OSRAM) 1974-06-01
DE2322490B2 (de) 1975-06-19
GB1374231A (en) 1974-11-20
FR2183882B1 (OSRAM) 1977-09-02
NL7306345A (OSRAM) 1973-11-12
CA974658A (en) 1975-09-16

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Legal Events

Date Code Title Description
ST Notification of lapse