FR2183124A1 - - Google Patents

Info

Publication number
FR2183124A1
FR2183124A1 FR7315647A FR7315647A FR2183124A1 FR 2183124 A1 FR2183124 A1 FR 2183124A1 FR 7315647 A FR7315647 A FR 7315647A FR 7315647 A FR7315647 A FR 7315647A FR 2183124 A1 FR2183124 A1 FR 2183124A1
Authority
FR
France
Prior art keywords
microns
width
internal portion
thick
peripheral portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7315647A
Other languages
English (en)
French (fr)
Other versions
FR2183124B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of FR2183124A1 publication Critical patent/FR2183124A1/fr
Application granted granted Critical
Publication of FR2183124B1 publication Critical patent/FR2183124B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • H10W72/01308Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07311Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/135Removal of substrate

Landscapes

  • Bipolar Transistors (AREA)
FR7315647A 1972-05-03 1973-05-02 Expired FR2183124B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24998172A 1972-05-03 1972-05-03

Publications (2)

Publication Number Publication Date
FR2183124A1 true FR2183124A1 (enExample) 1973-12-14
FR2183124B1 FR2183124B1 (enExample) 1976-09-10

Family

ID=22945819

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7315647A Expired FR2183124B1 (enExample) 1972-05-03 1973-05-02

Country Status (4)

Country Link
US (1) US3769563A (enExample)
JP (1) JPS5242636B2 (enExample)
CA (1) CA975468A (enExample)
FR (1) FR2183124B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868720A (en) * 1973-12-17 1975-02-25 Westinghouse Electric Corp High frequency bipolar transistor with integral thermally compensated degenerative feedback resistance
US3872494A (en) * 1974-02-08 1975-03-18 Westinghouse Electric Corp Field-contoured high speed, high voltage transistor
EP0262485A1 (de) * 1986-10-01 1988-04-06 BBC Brown Boveri AG Halbleiterbauelement mit einer Ätzgrube
JPH03501312A (ja) * 1988-08-31 1991-03-22 サンタ・バーバラ・リサーチ・センター 薄いシリコン装置の両側からの製造のための処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1205168A (fr) * 1957-12-11 1960-02-01 Westinghouse Electric Corp Transistors de puissance et procédé de fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3088888A (en) * 1959-03-31 1963-05-07 Ibm Methods of etching a semiconductor device
NL252974A (enExample) * 1959-07-24
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1205168A (fr) * 1957-12-11 1960-02-01 Westinghouse Electric Corp Transistors de puissance et procédé de fabrication

Also Published As

Publication number Publication date
JPS5242636B2 (enExample) 1977-10-25
FR2183124B1 (enExample) 1976-09-10
JPS4949578A (enExample) 1974-05-14
CA975468A (en) 1975-09-30
US3769563A (en) 1973-10-30

Similar Documents

Publication Publication Date Title
SE7711977L (sv) Tetning for tetning av tva maskinelement och anvendning av tetningen
NL180467C (nl) Halfgeleiderinrichting, omvattende een op een halfgeleidersubstraat aangegroeide epitaxiale laag van halfgeleidermateriaal, die in afzonderlijke eilandzones is verdeeld door een door plaatselijke oxydatie van halfgeleidermateriaal van de laag in de laag gevormd patroon van isolerend materiaal.
IT1011349B (it) Dispositivo e procedimento per la deposizione per via chimica di strati epitassiali su substrati semiconduttori
JPS51135373A (en) Semiconductor device
AT319137B (de) Wälzlagerdichtung mit einer kreisringförmigen, umlaufenden Dichtungsscheibe
FR2183124B1 (enExample)
GB1385882A (en) Seal assemblies
GB602746A (en) Improvements in oil and like seals
JPS52131478A (en) Semiconductor device
GB1053428A (enExample)
SE7413032L (enExample)
SE391413B (sv) Tyristor med hjelpemitter
FR2145371A1 (en) Radiation detector - using semiconductor single crystal body with nip structure
LU67043A1 (enExample)
GB1495864A (en) Inverse planar transistors
GB1220315A (en) Semi-conductor device
FR2207361A1 (en) Epitaxial growth of doped AIII-BV semiconductors - using a soln contg dopant, with reducing temp
NL7202594A (en) Information registration - by applying base voltage and superimposed voltage between electrode and layer of semiconductor/non
GB1370657A (en) Base plate for electrical capacitors
GB1425956A (en) Gate controlled switches
JPS5287990A (en) Semiconductor device
JPS5317284A (en) Production of semiconductor device
GT197852658A (es) Procedimiento de fabricacon de cerveza
GB860400A (en) Improvements relating to semi-conductor diodes
JPS5688361A (en) Static induction type reverse conductivity thyristor

Legal Events

Date Code Title Description
ST Notification of lapse