FR2160709B1 - - Google Patents

Info

Publication number
FR2160709B1
FR2160709B1 FR7141734A FR7141734A FR2160709B1 FR 2160709 B1 FR2160709 B1 FR 2160709B1 FR 7141734 A FR7141734 A FR 7141734A FR 7141734 A FR7141734 A FR 7141734A FR 2160709 B1 FR2160709 B1 FR 2160709B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7141734A
Other languages
French (fr)
Other versions
FR2160709A1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7141734A priority Critical patent/FR2160709B1/fr
Priority to GB5320472A priority patent/GB1408627A/en
Priority to IT7063772A priority patent/IT975787B/it
Priority to DE19722256883 priority patent/DE2256883C3/de
Priority to CA157,039A priority patent/CA984974A/en
Priority to JP47116739A priority patent/JPS52676B2/ja
Publication of FR2160709A1 publication Critical patent/FR2160709A1/fr
Application granted granted Critical
Publication of FR2160709B1 publication Critical patent/FR2160709B1/fr
Priority to US05/534,649 priority patent/US3993512A/en
Priority to US05/535,144 priority patent/US3961340A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7141734A 1971-11-22 1971-11-22 Expired FR2160709B1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR7141734A FR2160709B1 (de) 1971-11-22 1971-11-22
GB5320472A GB1408627A (en) 1971-11-22 1972-11-17 Semiconductor devices
DE19722256883 DE2256883C3 (de) 1971-11-22 1972-11-20 Halbleiteranordnung und Verfahren zu ihrer Herstellung
IT7063772A IT975787B (it) 1971-11-22 1972-11-20 Dispositivo circuitale integrato a transistori bipolari e procedi mento per la sua fabbricazione
CA157,039A CA984974A (en) 1971-11-22 1972-11-21 Integrated circuit having bipolar transistors and method of manufacturing said circuit
JP47116739A JPS52676B2 (de) 1971-11-22 1972-11-22
US05/534,649 US3993512A (en) 1971-11-22 1974-12-19 Method of manufacturing an integrated circuit utilizing outdiffusion and multiple layer epitaxy
US05/535,144 US3961340A (en) 1971-11-22 1974-12-20 Integrated circuit having bipolar transistors and method of manufacturing said circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7141734A FR2160709B1 (de) 1971-11-22 1971-11-22

Publications (2)

Publication Number Publication Date
FR2160709A1 FR2160709A1 (de) 1973-07-06
FR2160709B1 true FR2160709B1 (de) 1974-09-27

Family

ID=9086150

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7141734A Expired FR2160709B1 (de) 1971-11-22 1971-11-22

Country Status (6)

Country Link
JP (1) JPS52676B2 (de)
CA (1) CA984974A (de)
DE (1) DE2256883C3 (de)
FR (1) FR2160709B1 (de)
GB (1) GB1408627A (de)
IT (1) IT975787B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608267A1 (de) * 1976-02-28 1977-09-08 Itt Ind Gmbh Deutsche Verfahren zum herstellen einer monolithisch integrierten schaltung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit

Also Published As

Publication number Publication date
DE2256883C3 (de) 1981-03-12
JPS52676B2 (de) 1977-01-10
FR2160709A1 (de) 1973-07-06
JPS4860878A (de) 1973-08-25
DE2256883A1 (de) 1973-05-30
DE2256883B2 (de) 1980-07-10
GB1408627A (en) 1975-10-01
CA984974A (en) 1976-03-02
IT975787B (it) 1974-08-10

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Legal Events

Date Code Title Description
ST Notification of lapse