FR2154778A1 - - Google Patents

Info

Publication number
FR2154778A1
FR2154778A1 FR7234816A FR7234816A FR2154778A1 FR 2154778 A1 FR2154778 A1 FR 2154778A1 FR 7234816 A FR7234816 A FR 7234816A FR 7234816 A FR7234816 A FR 7234816A FR 2154778 A1 FR2154778 A1 FR 2154778A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7234816A
Other languages
French (fr)
Other versions
FR2154778B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2154778A1 publication Critical patent/FR2154778A1/fr
Application granted granted Critical
Publication of FR2154778B1 publication Critical patent/FR2154778B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10P50/283—
    • H10P76/40—
    • H10W10/012—
    • H10W10/13—
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
FR7234816A 1971-10-02 1972-10-02 Expired FR2154778B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7113561A NL7113561A (cg-RX-API-DMAC10.html) 1971-10-02 1971-10-02

Publications (2)

Publication Number Publication Date
FR2154778A1 true FR2154778A1 (cg-RX-API-DMAC10.html) 1973-05-11
FR2154778B1 FR2154778B1 (cg-RX-API-DMAC10.html) 1977-08-26

Family

ID=19814158

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7234816A Expired FR2154778B1 (cg-RX-API-DMAC10.html) 1971-10-02 1972-10-02

Country Status (9)

Country Link
US (1) US3852104A (cg-RX-API-DMAC10.html)
JP (1) JPS5112991B2 (cg-RX-API-DMAC10.html)
CH (1) CH546008A (cg-RX-API-DMAC10.html)
DE (1) DE2248198A1 (cg-RX-API-DMAC10.html)
ES (1) ES407201A1 (cg-RX-API-DMAC10.html)
FR (1) FR2154778B1 (cg-RX-API-DMAC10.html)
GB (1) GB1400865A (cg-RX-API-DMAC10.html)
IT (1) IT975127B (cg-RX-API-DMAC10.html)
NL (1) NL7113561A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455361A1 (fr) * 1979-04-23 1980-11-21 Philips Nv Procede pour fabriquer un transistor a effet de champ a porte isolee et transistor fabrique a l'aide d'un tel procede

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
CA1001771A (en) * 1973-01-15 1976-12-14 Fairchild Camera And Instrument Corporation Method of mos transistor manufacture and resulting structure
IN140846B (cg-RX-API-DMAC10.html) * 1973-08-06 1976-12-25 Rca Corp
GB1437112A (en) * 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS5293278A (en) * 1976-01-30 1977-08-05 Matsushita Electronics Corp Manufacture for mos type semiconductor intergrated circuit
US4125427A (en) * 1976-08-27 1978-11-14 Ncr Corporation Method of processing a semiconductor
US4219925A (en) * 1978-09-01 1980-09-02 Teletype Corporation Method of manufacturing a device in a silicon wafer
US4372033A (en) * 1981-09-08 1983-02-08 Ncr Corporation Method of making coplanar MOS IC structures
DE3572086D1 (en) * 1984-12-13 1989-09-07 Siemens Ag Method of producing an isolation separating the active regions of a highly integrated cmos circuit
US5247197A (en) * 1987-11-05 1993-09-21 Fujitsu Limited Dynamic random access memory device having improved contact hole structures
US5656510A (en) 1994-11-22 1997-08-12 Lucent Technologies Inc. Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578515A (en) * 1967-04-05 1971-05-11 Texas Instruments Inc Process for fabricating planar diodes in semi-insulating substrates

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
US3418227A (en) * 1966-03-31 1968-12-24 Texas Instruments Inc Process for fabricating multiple layer circuit boards
GB1250917A (cg-RX-API-DMAC10.html) * 1967-12-30 1971-10-27
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
US3699402A (en) * 1970-07-27 1972-10-17 Gen Electric Hybrid circuit power module
US3796612A (en) * 1971-08-05 1974-03-12 Scient Micro Syst Inc Semiconductor isolation method utilizing anisotropic etching and differential thermal oxidation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578515A (en) * 1967-04-05 1971-05-11 Texas Instruments Inc Process for fabricating planar diodes in semi-insulating substrates

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
"STRESS EFFECTS IN MASKING : FILMS ON SILICON", J.M. FAIRFIELD ET.AL., PAGES 110-113 *
*REVUE US "ELECTROCHEMICAL TECHNOLOGY", VOLUME 6, MARS-AVRIL 1968 *
NEW TECHNOLOGICAL ASPECTS", J.A. APPELS ET M.M. PAFFEN, PAGES 157-165 *
REVUE NL "PHILIPS RESEARCH REPORTS", VOLUME 26, JUIN 1971, "LOCAL OXIDATION OF SILICON *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2455361A1 (fr) * 1979-04-23 1980-11-21 Philips Nv Procede pour fabriquer un transistor a effet de champ a porte isolee et transistor fabrique a l'aide d'un tel procede

Also Published As

Publication number Publication date
ES407201A1 (es) 1975-11-01
JPS4844080A (cg-RX-API-DMAC10.html) 1973-06-25
US3852104A (en) 1974-12-03
CH546008A (cg-RX-API-DMAC10.html) 1974-02-15
NL7113561A (cg-RX-API-DMAC10.html) 1973-04-04
DE2248198A1 (de) 1973-04-05
GB1400865A (en) 1975-07-16
IT975127B (it) 1974-07-20
FR2154778B1 (cg-RX-API-DMAC10.html) 1977-08-26
JPS5112991B2 (cg-RX-API-DMAC10.html) 1976-04-23

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Legal Events

Date Code Title Description
ST Notification of lapse