FR2154664A1 - - Google Patents

Info

Publication number
FR2154664A1
FR2154664A1 FR7234255A FR7234255A FR2154664A1 FR 2154664 A1 FR2154664 A1 FR 2154664A1 FR 7234255 A FR7234255 A FR 7234255A FR 7234255 A FR7234255 A FR 7234255A FR 2154664 A1 FR2154664 A1 FR 2154664A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7234255A
Other languages
French (fr)
Other versions
FR2154664B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2154664A1 publication Critical patent/FR2154664A1/fr
Application granted granted Critical
Publication of FR2154664B1 publication Critical patent/FR2154664B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7234255A 1971-09-27 1972-09-20 Expired FR2154664B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18383371A 1971-09-27 1971-09-27

Publications (2)

Publication Number Publication Date
FR2154664A1 true FR2154664A1 (de) 1973-05-11
FR2154664B1 FR2154664B1 (de) 1976-05-21

Family

ID=22674479

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7234255A Expired FR2154664B1 (de) 1971-09-27 1972-09-20

Country Status (6)

Country Link
JP (1) JPS5338916B2 (de)
CA (1) CA974153A (de)
DE (1) DE2243285A1 (de)
FR (1) FR2154664B1 (de)
GB (1) GB1407222A (de)
IT (1) IT964137B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283311A2 (de) * 1987-03-18 1988-09-21 Kabushiki Kaisha Toshiba Anordnung und Verfahren zur Herstellung von Dünnschichten

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8507601D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Integrated circuits
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
US6838741B2 (en) * 2002-12-10 2005-01-04 General Electtric Company Avalanche photodiode for use in harsh environments

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE PROCEEDINGS OF THE IEEE, VOL. 57, N 9, SEPTEMBRE 1969 "PHOSPHOSILICATE GLASS STABILIZATION OF FET DEVICES", P.BALK, J.M.ELDRIDGE, PAGES 1558-1563.) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0283311A2 (de) * 1987-03-18 1988-09-21 Kabushiki Kaisha Toshiba Anordnung und Verfahren zur Herstellung von Dünnschichten
EP0283311A3 (de) * 1987-03-18 1992-04-08 Kabushiki Kaisha Toshiba Anordnung und Verfahren zur Herstellung von Dünnschichten
US5458919A (en) * 1987-03-18 1995-10-17 Kabushiki Kaisha Toshiba Method for forming a film on a substrate by activating a reactive gas
US5591486A (en) * 1987-03-18 1997-01-07 Kabushiki Kaisha Toshiba Method for forming a film on a substrate by activating a reactive gas
US5776557A (en) * 1987-03-18 1998-07-07 Kabushiki Kaisha Toshiba Method for forming a film on a substrate by activating a reactive gas

Also Published As

Publication number Publication date
GB1407222A (en) 1975-09-24
JPS5338916B2 (de) 1978-10-18
JPS4842678A (de) 1973-06-21
FR2154664B1 (de) 1976-05-21
IT964137B (it) 1974-01-21
DE2243285A1 (de) 1973-04-05
CA974153A (en) 1975-09-09

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Legal Events

Date Code Title Description
ST Notification of lapse