FR2145772A5 - Semiconductor component prodn - by doping silicon with antimony for prodn of various regions - Google Patents

Semiconductor component prodn - by doping silicon with antimony for prodn of various regions

Info

Publication number
FR2145772A5
FR2145772A5 FR7125290A FR7125290A FR2145772A5 FR 2145772 A5 FR2145772 A5 FR 2145772A5 FR 7125290 A FR7125290 A FR 7125290A FR 7125290 A FR7125290 A FR 7125290A FR 2145772 A5 FR2145772 A5 FR 2145772A5
Authority
FR
France
Prior art keywords
prodn
antimony
diffusion
sb2o3
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7125290A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7125290A priority Critical patent/FR2145772A5/en
Application granted granted Critical
Publication of FR2145772A5 publication Critical patent/FR2145772A5/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Two different methods of spatial definition of the regions may be used either photo etching layers deposited before diffusion, of photo etching of a mashing layer before definition. In either case a film of Sb2O3 is formed on the surface of the substrate by oxidn. of a stream of triethoxystobine in a neutral carrier gas, esp. N2, in the presence of a separately fed stream of O2, at 500-600 degrees C near the surface of the substrate in an enclosed reaction vessel. A protection film of pure Si is then deposited on the Sb2O3 and finally thermal diffusion takes place. Various surface resistivities are obtd. by variation of gas ratio and diffusion temp. and time. High crystal quality, and accurate control are possible.
FR7125290A 1971-07-09 1971-07-09 Semiconductor component prodn - by doping silicon with antimony for prodn of various regions Expired FR2145772A5 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7125290A FR2145772A5 (en) 1971-07-09 1971-07-09 Semiconductor component prodn - by doping silicon with antimony for prodn of various regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7125290A FR2145772A5 (en) 1971-07-09 1971-07-09 Semiconductor component prodn - by doping silicon with antimony for prodn of various regions

Publications (1)

Publication Number Publication Date
FR2145772A5 true FR2145772A5 (en) 1973-02-23

Family

ID=9080152

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7125290A Expired FR2145772A5 (en) 1971-07-09 1971-07-09 Semiconductor component prodn - by doping silicon with antimony for prodn of various regions

Country Status (1)

Country Link
FR (1) FR2145772A5 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000052738A2 (en) * 1999-02-26 2000-09-08 Robert Bosch Gmbh Method for producing highly doped semiconductor components

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000052738A2 (en) * 1999-02-26 2000-09-08 Robert Bosch Gmbh Method for producing highly doped semiconductor components
WO2000052738A3 (en) * 1999-02-26 2000-12-21 Bosch Gmbh Robert Method for producing highly doped semiconductor components

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Legal Events

Date Code Title Description
ST Notification of lapse