FR2138904A1 - - Google Patents

Info

Publication number
FR2138904A1
FR2138904A1 FR7218312A FR7218312A FR2138904A1 FR 2138904 A1 FR2138904 A1 FR 2138904A1 FR 7218312 A FR7218312 A FR 7218312A FR 7218312 A FR7218312 A FR 7218312A FR 2138904 A1 FR2138904 A1 FR 2138904A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7218312A
Other languages
French (fr)
Other versions
FR2138904B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2138904A1 publication Critical patent/FR2138904A1/fr
Application granted granted Critical
Publication of FR2138904B1 publication Critical patent/FR2138904B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
FR7218312A 1971-05-22 1972-05-23 Expired FR2138904B1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7107039.A NL166156C (nl) 1971-05-22 1971-05-22 Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan.

Publications (2)

Publication Number Publication Date
FR2138904A1 true FR2138904A1 (https=) 1973-01-05
FR2138904B1 FR2138904B1 (https=) 1980-04-04

Family

ID=19813232

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7218312A Expired FR2138904B1 (https=) 1971-05-22 1972-05-23

Country Status (16)

Country Link
US (1) US4272776A (https=)
JP (3) JPS5236394B1 (https=)
AR (1) AR193866A1 (https=)
AT (1) AT341000B (https=)
AU (1) AU473149B2 (https=)
BE (1) BE783737A (https=)
BR (1) BR7203232D0 (https=)
CA (1) CA975467A (https=)
CH (1) CH555088A (https=)
DE (1) DE2224634C2 (https=)
ES (2) ES403027A1 (https=)
FR (1) FR2138904B1 (https=)
GB (1) GB1393123A (https=)
IT (1) IT955675B (https=)
NL (1) NL166156C (https=)
SE (1) SE382281B (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2315169A1 (fr) * 1975-06-19 1977-01-14 Ibm Procede de fabrication de transistors bipolaires et unipolaires complementaires integres a hautes performances
FR2316735A1 (fr) * 1975-06-30 1977-01-28 Ibm Procede pour former un isolement dielectrique encastre permettant de reduire l'importance du probleme du " bec d'oiseau "
EP0002087A1 (fr) * 1977-11-14 1979-05-30 R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: Dispositif semiconducteur monolithique comprenant deux transistors complémentaires et son procédé de fabrication
EP0020994A1 (en) * 1979-06-14 1981-01-07 International Business Machines Corporation Method for making isolation trenches

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices
JPS54142688A (en) * 1978-04-28 1979-11-07 Shimada Burasuto Kougiyou Kk Inner surface machining method and device of pipe
USRE32090E (en) * 1980-05-07 1986-03-04 At&T Bell Laboratories Silicon integrated circuits
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
US4467312A (en) * 1980-12-23 1984-08-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor resistor device
GB2104722B (en) * 1981-06-25 1985-04-24 Suwa Seikosha Kk Mos semiconductor device and method of manufacturing the same
NL8203323A (nl) * 1982-08-25 1984-03-16 Philips Nv Geintegreerde weerstand.
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
US4574469A (en) * 1984-09-14 1986-03-11 Motorola, Inc. Process for self-aligned buried layer, channel-stop, and isolation
US4583282A (en) * 1984-09-14 1986-04-22 Motorola, Inc. Process for self-aligned buried layer, field guard, and isolation
JPH0779133B2 (ja) * 1986-06-12 1995-08-23 松下電器産業株式会社 半導体装置の製造方法
US5023690A (en) * 1986-10-24 1991-06-11 Texas Instruments Incorporated Merged bipolar and complementary metal oxide semiconductor transistor device
US4737468A (en) * 1987-04-13 1988-04-12 Motorola Inc. Process for developing implanted buried layer and/or key locators
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
US5139966A (en) * 1990-04-02 1992-08-18 National Semiconductor Corporation Low resistance silicided substrate contact
JPH04112565A (ja) * 1990-08-31 1992-04-14 Nec Corp 半導体抵抗素子及びその製造方法
US5504363A (en) * 1992-09-02 1996-04-02 Motorola Inc. Semiconductor device
EP1801855B1 (en) * 2005-12-22 2009-01-14 Freiberger Compound Materials GmbH Processes for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
DE102007029756A1 (de) * 2007-06-27 2009-01-02 X-Fab Semiconductor Foundries Ag Halbleiterstruktur zur Herstellung eines Trägerwaferkontaktes in grabenisolierten SOI-Scheiben
US9176173B2 (en) * 2011-11-28 2015-11-03 Texas Instruments Incorporated Method for detecting imperfect mounting of a rod-shaped metallic object in a metallic hollow shaft and a device
KR101874586B1 (ko) * 2012-08-06 2018-07-04 삼성전자주식회사 포토키를 이용한 반도체 소자의 제조 방법
US20190305128A1 (en) * 2018-04-03 2019-10-03 Vanguard International Semiconductor Corporation Semiconductor structure and method for forming the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461003A (en) * 1964-12-14 1969-08-12 Motorola Inc Method of fabricating a semiconductor structure with an electrically isolated region of semiconductor material
US3372063A (en) * 1964-12-22 1968-03-05 Hitachi Ltd Method for manufacturing at least one electrically isolated region of a semiconductive material
US3598664A (en) * 1964-12-29 1971-08-10 Texas Instruments Inc High frequency transistor and process for fabricating same
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3534234A (en) * 1966-12-15 1970-10-13 Texas Instruments Inc Modified planar process for making semiconductor devices having ultrafine mesa type geometry
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
US3432792A (en) * 1967-08-03 1969-03-11 Teledyne Inc Isolated resistor for integrated circuit
GB1206308A (en) * 1967-11-22 1970-09-23 Sony Corp Method of making semiconductor wafer
US3617822A (en) * 1967-12-05 1971-11-02 Sony Corp Semiconductor integrated circuit
FR1601776A (fr) * 1967-12-05 1970-09-14 Sony Corp Procédé de fabrication de circuits semi-conducteurs intégrés et circuits ainsi obtenus
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
US3702790A (en) * 1968-12-02 1972-11-14 Nippon Electric Co Monolithic integrated circuit device and method of manufacturing the same
US3659162A (en) * 1968-12-27 1972-04-25 Nippon Electric Co Semiconductor integrated circuit device having improved wiring layer structure
US3621346A (en) * 1970-01-28 1971-11-16 Ibm Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same
US3657612A (en) * 1970-04-20 1972-04-18 Ibm Inverse transistor with high current gain
US3865624A (en) * 1970-06-29 1975-02-11 Bell Telephone Labor Inc Interconnection of electrical devices
NL169936C (nl) * 1970-07-10 1982-09-01 Philips Nv Halfgeleiderinrichting omvattende een halfgeleiderlichaam met een althans ten dele in het halfgeleiderlichaam verzonken oxydepatroon.
US3736193A (en) * 1970-10-26 1973-05-29 Fairchild Camera Instr Co Single crystal-polycrystalline process for electrical isolation in integrated circuits
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3796613A (en) * 1971-06-18 1974-03-12 Ibm Method of forming dielectric isolation for high density pedestal semiconductor devices
GB1516304A (en) * 1974-07-25 1978-07-05 Dunlop Ltd Outflow meter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2315169A1 (fr) * 1975-06-19 1977-01-14 Ibm Procede de fabrication de transistors bipolaires et unipolaires complementaires integres a hautes performances
FR2316735A1 (fr) * 1975-06-30 1977-01-28 Ibm Procede pour former un isolement dielectrique encastre permettant de reduire l'importance du probleme du " bec d'oiseau "
EP0002087A1 (fr) * 1977-11-14 1979-05-30 R.T.C. LA RADIOTECHNIQUE-COMPELEC Société anonyme dite: Dispositif semiconducteur monolithique comprenant deux transistors complémentaires et son procédé de fabrication
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
EP0020994A1 (en) * 1979-06-14 1981-01-07 International Business Machines Corporation Method for making isolation trenches

Also Published As

Publication number Publication date
US4272776A (en) 1981-06-09
DE2224634A1 (de) 1972-11-30
IT955675B (it) 1973-09-29
FR2138904B1 (https=) 1980-04-04
DE2224634C2 (de) 1982-04-22
CA975467A (en) 1975-09-30
JPS52144985A (en) 1977-12-02
JPS5236394B1 (https=) 1977-09-14
AU473149B2 (en) 1976-06-17
BE783737A (fr) 1972-11-20
JPS52144984A (en) 1977-12-02
CH555088A (de) 1974-10-15
NL7107039A (https=) 1972-11-24
BR7203232D0 (pt) 1973-08-09
AT341000B (de) 1978-01-10
GB1393123A (en) 1975-05-07
ATA439472A (de) 1977-05-15
ES417610A1 (es) 1976-06-16
AR193866A1 (es) 1973-05-31
SE382281B (sv) 1976-01-19
ES403027A1 (es) 1975-04-16
NL166156B (nl) 1981-01-15
NL166156C (nl) 1981-06-15
AU4241472A (en) 1973-11-22

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