FR2134473B1 - - Google Patents

Info

Publication number
FR2134473B1
FR2134473B1 FR7214587A FR7214587A FR2134473B1 FR 2134473 B1 FR2134473 B1 FR 2134473B1 FR 7214587 A FR7214587 A FR 7214587A FR 7214587 A FR7214587 A FR 7214587A FR 2134473 B1 FR2134473 B1 FR 2134473B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7214587A
Other languages
French (fr)
Other versions
FR2134473A1 (show.php
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2134473A1 publication Critical patent/FR2134473A1/fr
Application granted granted Critical
Publication of FR2134473B1 publication Critical patent/FR2134473B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • H10N80/10Gunn-effect devices
    • H10N80/107Gunn diodes
    • H10W40/10
    • H10W40/70
    • H10W44/20
    • H10W72/5366
FR7214587A 1971-04-26 1972-04-25 Expired FR2134473B1 (show.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13737371A 1971-04-26 1971-04-26

Publications (2)

Publication Number Publication Date
FR2134473A1 FR2134473A1 (show.php) 1972-12-08
FR2134473B1 true FR2134473B1 (show.php) 1978-03-03

Family

ID=22477120

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7214587A Expired FR2134473B1 (show.php) 1971-04-26 1972-04-25

Country Status (6)

Country Link
US (1) US3755752A (show.php)
CA (1) CA962785A (show.php)
CH (1) CH560464A5 (show.php)
FR (1) FR2134473B1 (show.php)
GB (1) GB1380811A (show.php)
IT (1) IT952392B (show.php)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
US3896473A (en) * 1973-12-04 1975-07-22 Bell Telephone Labor Inc Gallium arsenide schottky barrier avalance diode array
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
US4197551A (en) * 1977-09-14 1980-04-08 Raytheon Company Semiconductor device having improved Schottky-barrier junction
US4374012A (en) * 1977-09-14 1983-02-15 Raytheon Company Method of making semiconductor device having improved Schottky-barrier junction
DE2926756C2 (de) * 1979-07-03 1984-03-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schottky-Dioden-Anordnung
FR2573272A1 (fr) * 1984-11-14 1986-05-16 Int Standard Electric Corp Procede de realisation d'un substrat comportant un conducteur coaxial
GB9414311D0 (en) * 1994-07-15 1994-09-07 Philips Electronics Uk Ltd A transferred electron effect device
US6208210B1 (en) * 1999-04-07 2001-03-27 Ericsson Inc. Advanced hybrid power amplifier design
US9945048B2 (en) * 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
CN102738392B (zh) * 2012-07-06 2014-04-02 中国科学院微电子研究所 一种耿氏二极管、其制备方法及毫米波振荡器
US9398723B2 (en) 2013-08-29 2016-07-19 Eaton Corporation Apparatus and methods using heat pipes for linking electronic assemblies that unequally produce heat

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515952A (en) * 1965-02-17 1970-06-02 Motorola Inc Mounting structure for high power transistors
GB1161782A (en) * 1965-08-26 1969-08-20 Associated Semiconductor Mft Improvements in Semiconductor Devices.
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device
GB1123389A (en) * 1965-12-20 1968-08-14 Matsushita Electronics Corp A solid state microwave oscillating device
US3457471A (en) * 1966-10-10 1969-07-22 Microwave Ass Semiconductor diodes of the junction type having a heat sink at the surface nearer to the junction
GB1234764A (en) * 1967-08-25 1971-06-09 Nat Res Dev Solid state radar
US3531698A (en) * 1968-05-21 1970-09-29 Hewlett Packard Co Current control in bulk negative conductance materials
US3675161A (en) * 1968-10-12 1972-07-04 Matsushita Electronics Corp Varactor-controlled pn junction semiconductor microwave oscillation device
NL6902447A (show.php) * 1969-02-14 1970-08-18
US3689900A (en) * 1970-08-31 1972-09-05 Gen Electric Photo-coded diode array for read only memory
US3673514A (en) * 1970-12-31 1972-06-27 Bell Telephone Labor Inc Schottky barrier transit time negative resistance diode circuits

Also Published As

Publication number Publication date
IT952392B (it) 1973-07-20
US3755752A (en) 1973-08-28
FR2134473A1 (show.php) 1972-12-08
GB1380811A (en) 1975-01-15
CA962785A (en) 1975-02-11
DE2220485B2 (de) 1976-10-14
CH560464A5 (show.php) 1975-03-27
DE2220485A1 (de) 1972-11-16

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Legal Events

Date Code Title Description
ST Notification of lapse