FR2128164A1 - - Google Patents

Info

Publication number
FR2128164A1
FR2128164A1 FR7108025A FR7108025A FR2128164A1 FR 2128164 A1 FR2128164 A1 FR 2128164A1 FR 7108025 A FR7108025 A FR 7108025A FR 7108025 A FR7108025 A FR 7108025A FR 2128164 A1 FR2128164 A1 FR 2128164A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7108025A
Other languages
French (fr)
Other versions
FR2128164B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7108025A priority Critical patent/FR2128164B1/fr
Priority to IT6772972A priority patent/IT952930B/it
Priority to GB1114772A priority patent/GB1380143A/en
Priority to BE780423A priority patent/BE780423A/xx
Publication of FR2128164A1 publication Critical patent/FR2128164A1/fr
Application granted granted Critical
Publication of FR2128164B1 publication Critical patent/FR2128164B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
FR7108025A 1971-03-09 1971-03-09 Expired FR2128164B1 (enrdf_load_stackoverflow)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7108025A FR2128164B1 (enrdf_load_stackoverflow) 1971-03-09 1971-03-09
IT6772972A IT952930B (it) 1971-03-09 1972-03-08 Procedimento per la fabbricazione di circuiti integrati al silicio
GB1114772A GB1380143A (enrdf_load_stackoverflow) 1971-03-09 1972-03-09
BE780423A BE780423A (fr) 1971-03-09 1972-03-09 Procede de fabrication de circuits integres au silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7108025A FR2128164B1 (enrdf_load_stackoverflow) 1971-03-09 1971-03-09

Publications (2)

Publication Number Publication Date
FR2128164A1 true FR2128164A1 (enrdf_load_stackoverflow) 1972-10-20
FR2128164B1 FR2128164B1 (enrdf_load_stackoverflow) 1973-11-30

Family

ID=9073164

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7108025A Expired FR2128164B1 (enrdf_load_stackoverflow) 1971-03-09 1971-03-09

Country Status (4)

Country Link
BE (1) BE780423A (enrdf_load_stackoverflow)
FR (1) FR2128164B1 (enrdf_load_stackoverflow)
GB (1) GB1380143A (enrdf_load_stackoverflow)
IT (1) IT952930B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601093A4 (en) * 1991-08-28 1995-04-12 Advanced Power Technology METHOD FOR PRODUCING TRANSISTORS WITH INSULATED GATE USING PLATINUM TO CONTROL LIFETIME AND IGBT ARRANGEMENTS MANUFACTURED BY THIS METHOD.
EP0675527A1 (en) * 1994-03-30 1995-10-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Manufacturing process for obtaining bipolar transistors with controlled storage time

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030293A1 (enrdf_load_stackoverflow) * 1969-02-04 1970-11-13 Western Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2030293A1 (enrdf_load_stackoverflow) * 1969-02-04 1970-11-13 Western Electric Co

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOL.10,OCTOBRE 1967"SELECTIVE AREA GOLD DOPING IN INTEGRATED CIRCUITS" F.BARSON PAGE 659.) *
(REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOL.10,OCTOBRE 1967,"SELECTIVE AREA GOLD DOPING IN INTEGRATED CIRCUITS" F.BARSON PAGE 659. *
DOPING IN INTEGRATED CIRCUITS" F.BARSON PAGE 659.) *
REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOL.10,OCTOBRE 1967"SELECTIVE AREA GOLD *
REVUE INTERNATIONALE "SOLID-STATE ELECTRONICS" VOL.13, JUILLET 1970,"THE INFLUENCE OF PLATINUMIN THE SI-SIO2 SYSTEM" S.D.BROTHER SON PAGES 1113-1115.) *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0601093A4 (en) * 1991-08-28 1995-04-12 Advanced Power Technology METHOD FOR PRODUCING TRANSISTORS WITH INSULATED GATE USING PLATINUM TO CONTROL LIFETIME AND IGBT ARRANGEMENTS MANUFACTURED BY THIS METHOD.
EP0675527A1 (en) * 1994-03-30 1995-10-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Manufacturing process for obtaining bipolar transistors with controlled storage time
US5624852A (en) * 1994-03-30 1997-04-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time
US5629555A (en) * 1994-03-30 1997-05-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integrated structure bipolar transistors with controlled storage time

Also Published As

Publication number Publication date
BE780423A (fr) 1972-07-03
IT952930B (it) 1973-07-30
FR2128164B1 (enrdf_load_stackoverflow) 1973-11-30
GB1380143A (enrdf_load_stackoverflow) 1975-01-08

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