FR2118846A1 - Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material - Google Patents

Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Info

Publication number
FR2118846A1
FR2118846A1 FR7046205A FR7046205A FR2118846A1 FR 2118846 A1 FR2118846 A1 FR 2118846A1 FR 7046205 A FR7046205 A FR 7046205A FR 7046205 A FR7046205 A FR 7046205A FR 2118846 A1 FR2118846 A1 FR 2118846A1
Authority
FR
France
Prior art keywords
radiation
layer
opposite type
base material
semiconductor detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7046205A
Other languages
English (en)
French (fr)
Other versions
FR2118846B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7046205A priority Critical patent/FR2118846A1/fr
Publication of FR2118846A1 publication Critical patent/FR2118846A1/fr
Application granted granted Critical
Publication of FR2118846B1 publication Critical patent/FR2118846B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors

Landscapes

  • Light Receiving Elements (AREA)
FR7046205A 1970-12-22 1970-12-22 Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material Granted FR2118846A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7046205A FR2118846A1 (en) 1970-12-22 1970-12-22 Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7046205A FR2118846A1 (en) 1970-12-22 1970-12-22 Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Publications (2)

Publication Number Publication Date
FR2118846A1 true FR2118846A1 (en) 1972-08-04
FR2118846B1 FR2118846B1 (OSRAM) 1976-09-03

Family

ID=9066179

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7046205A Granted FR2118846A1 (en) 1970-12-22 1970-12-22 Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Country Status (1)

Country Link
FR (1) FR2118846A1 (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099504A (en) * 1987-03-31 1992-03-24 Adaptive Technologies, Inc. Thickness/density mesuring apparatus
US6249033B1 (en) * 1997-02-27 2001-06-19 Istituto Nazionale Di Fisica Nucleare Controlled-drift apparatus for detecting energy and point of incidence of electromagnetic radiations or ionizing particles

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1522805A (fr) * 1966-05-12 1968-04-26 Varian Associates Détecteur semiconducteur de rayonnement
GB1115939A (en) * 1966-03-18 1968-06-06 Oesterr Studien Atomenergie An improved method for producing a semiconductor radiation detector
DE1916938A1 (de) * 1968-06-14 1969-12-18 Siemens Ag Strahlungsdetektor mit einem stabfoermigen Halbleiterkoerper

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1115939A (en) * 1966-03-18 1968-06-06 Oesterr Studien Atomenergie An improved method for producing a semiconductor radiation detector
FR1522805A (fr) * 1966-05-12 1968-04-26 Varian Associates Détecteur semiconducteur de rayonnement
DE1916938A1 (de) * 1968-06-14 1969-12-18 Siemens Ag Strahlungsdetektor mit einem stabfoermigen Halbleiterkoerper

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
"P-N SEMICONDUCTOR DETECTORS FOR SEVERE ENVIRONMENTAL CONDITIONS"C.D.WILBURN ET AL,PAGES *
(REVUE AMERICAINE:"IEEE TRANSACTIONS ON NUCLEAR SICIENCE"VOLUME NS-14,NO.1,FEVRIER 1967: "P-N SEMICONDUCTOR DETECTORS FOR SEVERE ENVIRONMENTAL CONDITIONS"C.D.WILBURN ET AL,PAGES 569-572. *
*REVUE AMERICAINE:"IEEE TRANSACTONS ON NUCLEAR SCIENCE"VOLUME NS-15,JUIN 1968"LITHIUM- DRIFTED GERMANIUM FOR CHARGED PARTICLE SPECTROSCOPY",C.R.GRUHN ET AL,PAGES 337-346.) *
569-572. *
DRIFTED GERMANIUM FOR CHARGED PARTICLE SPECTROSCOPY",C.R.GRUHN ET AL,PAGES 337-346.) *
REVUE AMERICAINE:"IEEE TRANSACTIONS ON NUCLEAR SICIENCE"VOLUME NS-14,NO.1,FEVRIER 1967: *
REVUE AMERICAINE:"IEEE TRANSACTONS ON NUCLEAR SCIENCE"VOLUME NS-15,JUIN 1968"LITHIUM- *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099504A (en) * 1987-03-31 1992-03-24 Adaptive Technologies, Inc. Thickness/density mesuring apparatus
US6249033B1 (en) * 1997-02-27 2001-06-19 Istituto Nazionale Di Fisica Nucleare Controlled-drift apparatus for detecting energy and point of incidence of electromagnetic radiations or ionizing particles

Also Published As

Publication number Publication date
FR2118846B1 (OSRAM) 1976-09-03

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Legal Events

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