FR2118357A5 - - Google Patents

Info

Publication number
FR2118357A5
FR2118357A5 FR7045791A FR7045791A FR2118357A5 FR 2118357 A5 FR2118357 A5 FR 2118357A5 FR 7045791 A FR7045791 A FR 7045791A FR 7045791 A FR7045791 A FR 7045791A FR 2118357 A5 FR2118357 A5 FR 2118357A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7045791A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7045791A priority Critical patent/FR2118357A5/fr
Application granted granted Critical
Publication of FR2118357A5 publication Critical patent/FR2118357A5/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H03K19/21—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
FR7045791A 1970-12-18 1970-12-18 Expired FR2118357A5 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7045791A FR2118357A5 (fr) 1970-12-18 1970-12-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7045791A FR2118357A5 (fr) 1970-12-18 1970-12-18

Publications (1)

Publication Number Publication Date
FR2118357A5 true FR2118357A5 (fr) 1972-07-28

Family

ID=9066038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7045791A Expired FR2118357A5 (fr) 1970-12-18 1970-12-18

Country Status (1)

Country Link
FR (1) FR2118357A5 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539967A1 (de) * 1975-09-02 1977-03-10 Siemens Ag Logikgrundschaltung
EP0030130A1 (fr) * 1979-11-29 1981-06-10 Fujitsu Limited Oscillateur et EPROM comportant un tel oscillateur
EP0289893A2 (fr) * 1987-04-27 1988-11-09 National Semiconductor Corporation Circuit décodeur bipmos

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2017619A1 (fr) * 1968-09-09 1970-05-22 Texas Instruments Inc
DE1958618A1 (de) * 1968-12-13 1970-07-02 North American Rockwell Niederspannungs-Kopplungselektronik

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2017619A1 (fr) * 1968-09-09 1970-05-22 Texas Instruments Inc
DE1958618A1 (de) * 1968-12-13 1970-07-02 North American Rockwell Niederspannungs-Kopplungselektronik

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/67 *
EXBK/69 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539967A1 (de) * 1975-09-02 1977-03-10 Siemens Ag Logikgrundschaltung
EP0030130A1 (fr) * 1979-11-29 1981-06-10 Fujitsu Limited Oscillateur et EPROM comportant un tel oscillateur
EP0289893A2 (fr) * 1987-04-27 1988-11-09 National Semiconductor Corporation Circuit décodeur bipmos
EP0289893A3 (en) * 1987-04-27 1988-11-30 National Semiconductor Corporation Bipmos decoder circuit
US4857772A (en) * 1987-04-27 1989-08-15 Fairchild Semiconductor Corporation BIPMOS decoder circuit

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse