FR2115404B1 - - Google Patents

Info

Publication number
FR2115404B1
FR2115404B1 FR7142266A FR7142266A FR2115404B1 FR 2115404 B1 FR2115404 B1 FR 2115404B1 FR 7142266 A FR7142266 A FR 7142266A FR 7142266 A FR7142266 A FR 7142266A FR 2115404 B1 FR2115404 B1 FR 2115404B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7142266A
Other languages
French (fr)
Other versions
FR2115404A1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2115404A1 publication Critical patent/FR2115404A1/fr
Application granted granted Critical
Publication of FR2115404B1 publication Critical patent/FR2115404B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238Complementary field-effect transistors, e.g. CMOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR7142266A 1970-11-28 1971-11-25 Expired FR2115404B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2058660 1970-11-28

Publications (2)

Publication Number Publication Date
FR2115404A1 FR2115404A1 (de) 1972-07-07
FR2115404B1 true FR2115404B1 (de) 1975-08-29

Family

ID=5789394

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7142266A Expired FR2115404B1 (de) 1970-11-28 1971-11-25

Country Status (5)

Country Link
CH (1) CH537643A (de)
DE (1) DE2058660B1 (de)
FR (1) FR2115404B1 (de)
GB (1) GB1308288A (de)
IT (1) IT940667B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821781A (en) * 1972-11-01 1974-06-28 Ibm Complementary field effect transistors having p doped silicon gates

Also Published As

Publication number Publication date
CH537643A (de) 1973-05-31
IT940667B (it) 1973-02-20
DE2058660B1 (de) 1972-06-08
GB1308288A (en) 1973-02-21
FR2115404A1 (de) 1972-07-07

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Legal Events

Date Code Title Description
ST Notification of lapse