FR2108781B1 - - Google Patents

Info

Publication number
FR2108781B1
FR2108781B1 FR7035834A FR7035834A FR2108781B1 FR 2108781 B1 FR2108781 B1 FR 2108781B1 FR 7035834 A FR7035834 A FR 7035834A FR 7035834 A FR7035834 A FR 7035834A FR 2108781 B1 FR2108781 B1 FR 2108781B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7035834A
Other versions
FR2108781A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7035834A priority Critical patent/FR2108781B1/fr
Priority to DE19712148056 priority patent/DE2148056A1/de
Priority to NL7113483A priority patent/NL7113483A/xx
Priority to GB4581471A priority patent/GB1357432A/en
Priority to JP7683571A priority patent/JPS477519A/ja
Publication of FR2108781A1 publication Critical patent/FR2108781A1/fr
Priority to US05/490,409 priority patent/US3978511A/en
Application granted granted Critical
Publication of FR2108781B1 publication Critical patent/FR2108781B1/fr
Priority to US05/661,054 priority patent/US4046609A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
FR7035834A 1970-10-05 1970-10-05 Expired FR2108781B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7035834A FR2108781B1 (fr) 1970-10-05 1970-10-05
DE19712148056 DE2148056A1 (de) 1970-10-05 1971-09-25 Halbleiterdiode und Verfahren zu deren Herstellung
NL7113483A NL7113483A (fr) 1970-10-05 1971-10-01
GB4581471A GB1357432A (en) 1970-10-05 1971-10-01 Semiconductor devices
JP7683571A JPS477519A (fr) 1970-10-05 1972-04-22
US05/490,409 US3978511A (en) 1970-10-05 1974-07-22 Semiconductor diode and method of manufacturing same
US05/661,054 US4046609A (en) 1970-10-05 1976-02-25 Method of manufacturing photo-diodes utilizing sequential diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7035834A FR2108781B1 (fr) 1970-10-05 1970-10-05

Publications (2)

Publication Number Publication Date
FR2108781A1 FR2108781A1 (fr) 1972-05-26
FR2108781B1 true FR2108781B1 (fr) 1974-10-31

Family

ID=9062259

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7035834A Expired FR2108781B1 (fr) 1970-10-05 1970-10-05

Country Status (6)

Country Link
US (2) US3978511A (fr)
JP (1) JPS477519A (fr)
DE (1) DE2148056A1 (fr)
FR (1) FR2108781B1 (fr)
GB (1) GB1357432A (fr)
NL (1) NL7113483A (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079405A (en) * 1974-07-05 1978-03-14 Hitachi, Ltd. Semiconductor photodetector
JPS524154B2 (fr) * 1974-08-22 1977-02-01
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode
CA1080836A (fr) * 1977-09-21 1980-07-01 Paul P. Webb Photodiode a avalanche, a elements multiples au bruit electrique reduit
US4160985A (en) * 1977-11-25 1979-07-10 Hewlett-Packard Company Photosensing arrays with improved spatial resolution
US4144540A (en) * 1978-02-06 1979-03-13 The United States Of America As Represented By The Secretary Of The Navy Tunable infrared detector with narrow bandwidth
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
US4544939A (en) * 1981-08-25 1985-10-01 Rca Corporation Schottky-barrier diode radiant energy detector with extended longer wavelength response
FR2581252B1 (fr) * 1985-04-26 1988-06-10 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
JPH09237913A (ja) * 1995-12-28 1997-09-09 Fuji Xerox Co Ltd 半導体受光素子及びその製造方法
US5757065A (en) * 1996-10-04 1998-05-26 Xerox Corporation High voltage integrated circuit diode with a charge injecting node
KR100263473B1 (ko) * 1998-02-16 2000-08-01 김영환 고체촬상소자 및 그의 제조방법
GB9804177D0 (en) * 1998-02-28 1998-04-22 Philips Electronics Nv Semiconductor switch devices and their manufacture
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
ES2616248T3 (es) * 2002-02-01 2017-06-12 Picometrix, Llc Fotodiodo PIN de alta velocidad con respuesta incrementada
JP2004006694A (ja) * 2002-03-29 2004-01-08 Toshiba Corp 受光素子及び光半導体装置
RU2290721C2 (ru) * 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
US10490687B2 (en) * 2018-01-29 2019-11-26 Waymo Llc Controlling detection time in photodetectors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464305B2 (de) * 1962-02-10 1970-09-10 Nippon Electric Co. Ltd., Tokio Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente
BE636317A (fr) * 1962-08-23 1900-01-01
US3362858A (en) * 1963-01-04 1968-01-09 Westinghouse Electric Corp Fabrication of semiconductor controlled rectifiers
US3383571A (en) * 1965-07-19 1968-05-14 Rca Corp High-frequency power transistor with improved reverse-bias second breakdown characteristics
DE1514151A1 (de) * 1965-08-09 1969-06-19 Licentia Gmbh Thyristorstruktur
GB1158585A (en) * 1965-12-06 1969-07-16 Lucas Industries Ltd Gate Controlled Switches
US3582830A (en) * 1967-09-08 1971-06-01 Polska Akademia Nauk Instytut Semiconductor device intended especially for microwave photodetectors
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
NL6904543A (fr) * 1969-03-25 1970-09-29
DE2104752B2 (de) * 1971-02-02 1975-02-20 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode

Also Published As

Publication number Publication date
JPS477519A (fr) 1972-04-22
DE2148056A1 (de) 1972-04-06
US3978511A (en) 1976-08-31
FR2108781A1 (fr) 1972-05-26
US4046609A (en) 1977-09-06
NL7113483A (fr) 1972-04-07
GB1357432A (en) 1974-06-19

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Legal Events

Date Code Title Description
ST Notification of lapse