FR2108781A1 - - Google Patents

Info

Publication number
FR2108781A1
FR2108781A1 FR7035834A FR7035834A FR2108781A1 FR 2108781 A1 FR2108781 A1 FR 2108781A1 FR 7035834 A FR7035834 A FR 7035834A FR 7035834 A FR7035834 A FR 7035834A FR 2108781 A1 FR2108781 A1 FR 2108781A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7035834A
Other languages
French (fr)
Other versions
FR2108781B1 (en, 2012
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7035834A priority Critical patent/FR2108781B1/fr
Priority to DE19712148056 priority patent/DE2148056A1/de
Priority to NL7113483A priority patent/NL7113483A/xx
Priority to GB4581471A priority patent/GB1357432A/en
Priority to JP7683571A priority patent/JPS477519A/ja
Publication of FR2108781A1 publication Critical patent/FR2108781A1/fr
Priority to US05/490,409 priority patent/US3978511A/en
Application granted granted Critical
Publication of FR2108781B1 publication Critical patent/FR2108781B1/fr
Priority to US05/661,054 priority patent/US4046609A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
FR7035834A 1970-10-05 1970-10-05 Expired FR2108781B1 (en, 2012)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7035834A FR2108781B1 (en, 2012) 1970-10-05 1970-10-05
DE19712148056 DE2148056A1 (de) 1970-10-05 1971-09-25 Halbleiterdiode und Verfahren zu deren Herstellung
NL7113483A NL7113483A (en, 2012) 1970-10-05 1971-10-01
GB4581471A GB1357432A (en) 1970-10-05 1971-10-01 Semiconductor devices
JP7683571A JPS477519A (en, 2012) 1970-10-05 1972-04-22
US05/490,409 US3978511A (en) 1970-10-05 1974-07-22 Semiconductor diode and method of manufacturing same
US05/661,054 US4046609A (en) 1970-10-05 1976-02-25 Method of manufacturing photo-diodes utilizing sequential diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7035834A FR2108781B1 (en, 2012) 1970-10-05 1970-10-05

Publications (2)

Publication Number Publication Date
FR2108781A1 true FR2108781A1 (en, 2012) 1972-05-26
FR2108781B1 FR2108781B1 (en, 2012) 1974-10-31

Family

ID=9062259

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7035834A Expired FR2108781B1 (en, 2012) 1970-10-05 1970-10-05

Country Status (6)

Country Link
US (2) US3978511A (en, 2012)
JP (1) JPS477519A (en, 2012)
DE (1) DE2148056A1 (en, 2012)
FR (1) FR2108781B1 (en, 2012)
GB (1) GB1357432A (en, 2012)
NL (1) NL7113483A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581252A1 (fr) * 1985-04-26 1986-10-31 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079405A (en) * 1974-07-05 1978-03-14 Hitachi, Ltd. Semiconductor photodetector
JPS524154B2 (en, 2012) * 1974-08-22 1977-02-01
JPS5252593A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving diode
CA1080836A (en) * 1977-09-21 1980-07-01 Paul P. Webb Multi-element avalanche photodiode having reduced electrical noise
US4160985A (en) * 1977-11-25 1979-07-10 Hewlett-Packard Company Photosensing arrays with improved spatial resolution
US4144540A (en) * 1978-02-06 1979-03-13 The United States Of America As Represented By The Secretary Of The Navy Tunable infrared detector with narrow bandwidth
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
US4544939A (en) * 1981-08-25 1985-10-01 Rca Corporation Schottky-barrier diode radiant energy detector with extended longer wavelength response
GB2201543A (en) * 1987-02-25 1988-09-01 Philips Electronic Associated A photosensitive device
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
JPH09237913A (ja) * 1995-12-28 1997-09-09 Fuji Xerox Co Ltd 半導体受光素子及びその製造方法
US5757065A (en) * 1996-10-04 1998-05-26 Xerox Corporation High voltage integrated circuit diode with a charge injecting node
KR100263473B1 (ko) 1998-02-16 2000-08-01 김영환 고체촬상소자 및 그의 제조방법
GB9804177D0 (en) * 1998-02-28 1998-04-22 Philips Electronics Nv Semiconductor switch devices and their manufacture
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
CN100474634C (zh) * 2002-02-01 2009-04-01 派克米瑞斯公司 改进的光电探测器
JP2004006694A (ja) * 2002-03-29 2004-01-08 Toshiba Corp 受光素子及び光半導体装置
RU2290721C2 (ru) * 2004-05-05 2006-12-27 Борис Анатольевич Долгошеин Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя
US10490687B2 (en) 2018-01-29 2019-11-26 Waymo Llc Controlling detection time in photodetectors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6616657A (en, 2012) * 1965-12-06 1967-06-07
NL6904543A (en, 2012) * 1969-03-25 1970-09-29

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464305B2 (de) * 1962-02-10 1970-09-10 Nippon Electric Co. Ltd., Tokio Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente
NL302804A (en, 2012) * 1962-08-23 1900-01-01
US3362858A (en) * 1963-01-04 1968-01-09 Westinghouse Electric Corp Fabrication of semiconductor controlled rectifiers
US3383571A (en) * 1965-07-19 1968-05-14 Rca Corp High-frequency power transistor with improved reverse-bias second breakdown characteristics
DE1514151A1 (de) * 1965-08-09 1969-06-19 Licentia Gmbh Thyristorstruktur
US3582830A (en) * 1967-09-08 1971-06-01 Polska Akademia Nauk Instytut Semiconductor device intended especially for microwave photodetectors
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
DE2104752B2 (de) * 1971-02-02 1975-02-20 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6616657A (en, 2012) * 1965-12-06 1967-06-07
NL6904543A (en, 2012) * 1969-03-25 1970-09-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581252A1 (fr) * 1985-04-26 1986-10-31 Radiotechnique Compelec Composant semiconducteur du type planar a structure d'anneaux de garde, famille de tels composants et procede de realisation
EP0199424A3 (en) * 1985-04-26 1987-01-21 Rtc-Compelec Planar semiconductor device with a guard ring structure, family of such devices and method of manufacture

Also Published As

Publication number Publication date
US4046609A (en) 1977-09-06
FR2108781B1 (en, 2012) 1974-10-31
DE2148056A1 (de) 1972-04-06
NL7113483A (en, 2012) 1972-04-07
JPS477519A (en, 2012) 1972-04-22
GB1357432A (en) 1974-06-19
US3978511A (en) 1976-08-31

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Legal Events

Date Code Title Description
ST Notification of lapse