FR2101228A1 - - Google Patents

Info

Publication number
FR2101228A1
FR2101228A1 FR7123166A FR7123166A FR2101228A1 FR 2101228 A1 FR2101228 A1 FR 2101228A1 FR 7123166 A FR7123166 A FR 7123166A FR 7123166 A FR7123166 A FR 7123166A FR 2101228 A1 FR2101228 A1 FR 2101228A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7123166A
Other versions
FR2101228B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2101228A1 publication Critical patent/FR2101228A1/fr
Application granted granted Critical
Publication of FR2101228B1 publication Critical patent/FR2101228B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7123166A 1970-08-05 1971-06-22 Expired FR2101228B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6112870A 1970-08-05 1970-08-05

Publications (2)

Publication Number Publication Date
FR2101228A1 true FR2101228A1 (fr) 1972-03-31
FR2101228B1 FR2101228B1 (fr) 1974-08-23

Family

ID=22033770

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123166A Expired FR2101228B1 (fr) 1970-08-05 1971-06-22

Country Status (5)

Country Link
US (1) US3770519A (fr)
JP (1) JPS5016152B1 (fr)
CA (1) CA921178A (fr)
FR (1) FR2101228B1 (fr)
GB (1) GB1298059A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020233A1 (fr) * 1979-05-29 1980-12-10 Thomson-Csf Structure intégrée comportant un transistor et trois diodes antisaturation
EP0022687A1 (fr) * 1979-06-12 1981-01-21 Thomson-Csf Circuit intégré monolithique équivalent à un transistor associé à trois diodes anti-saturation et son procédé de fabrication
EP0077921A2 (fr) * 1981-10-23 1983-05-04 Kabushiki Kaisha Toshiba Dispositif semi-conducteur
EP0517623A2 (fr) * 1991-05-31 1992-12-09 STMicroelectronics S.A. Transistor de gain en courant prédéterminé dans un circuit intégré bipolaire
EP0630051A1 (fr) * 1993-06-15 1994-12-21 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Structure intégrée d'un transistor bipolaire ou commutation ayant un temps d'emmagasinage contrôlé

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
US3959040A (en) * 1971-09-01 1976-05-25 Motorola, Inc. Compound diffused regions for emitter-coupled logic circuits
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
US4177095A (en) * 1977-02-25 1979-12-04 National Semiconductor Corporation Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps
DE2715158A1 (de) * 1977-04-05 1978-10-19 Licentia Gmbh Verfahren zur herstellung mindestens einer mit mindestens einer i hoch 2 l-schaltung integrierten analogschaltung
EP0054303B1 (fr) * 1980-12-17 1986-06-11 Matsushita Electric Industrial Co., Ltd. Semiconducteur à circuit intégré
US6995068B1 (en) * 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441815A (en) * 1964-07-02 1969-04-29 Westinghouse Electric Corp Semiconductor structures for integrated circuitry and method of making the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor
US3465215A (en) * 1967-06-30 1969-09-02 Texas Instruments Inc Process for fabricating monolithic circuits having matched complementary transistors and product
US3596149A (en) * 1967-08-16 1971-07-27 Hitachi Ltd Semiconductor integrated circuit with reduced minority carrier storage effect
DE1764556C3 (de) * 1968-06-26 1979-01-04 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines Sperrschichtkondensatorelements und danach hergestellte Sperrschichtkondensatorelemente
US3525911A (en) * 1968-06-06 1970-08-25 Westinghouse Electric Corp Semiconductor integrated circuit including improved diode structure
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441815A (en) * 1964-07-02 1969-04-29 Westinghouse Electric Corp Semiconductor structures for integrated circuitry and method of making the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOLUME 13 JUIN 1970"SEMICONDUCTOR STRUCTURE"H.BERGER ET AL PAGE 295) *
REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOLUME 13 JUIN 1970"SEMICONDUCTOR *
STRUCTURE"H.BERGER ET AL PAGE 295) *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020233A1 (fr) * 1979-05-29 1980-12-10 Thomson-Csf Structure intégrée comportant un transistor et trois diodes antisaturation
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
EP0022687A1 (fr) * 1979-06-12 1981-01-21 Thomson-Csf Circuit intégré monolithique équivalent à un transistor associé à trois diodes anti-saturation et son procédé de fabrication
EP0077921A2 (fr) * 1981-10-23 1983-05-04 Kabushiki Kaisha Toshiba Dispositif semi-conducteur
EP0077921A3 (fr) * 1981-10-23 1986-04-09 Kabushiki Kaisha Toshiba Dispositif semi-conducteur
EP0517623A2 (fr) * 1991-05-31 1992-12-09 STMicroelectronics S.A. Transistor de gain en courant prédéterminé dans un circuit intégré bipolaire
EP0517623A3 (en) * 1991-05-31 1994-08-10 Sgs Thomson Microelectronics Transistor with a predetermined current gain in a bipolar integrated circuit
EP0630051A1 (fr) * 1993-06-15 1994-12-21 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe Structure intégrée d'un transistor bipolaire ou commutation ayant un temps d'emmagasinage contrôlé

Also Published As

Publication number Publication date
DE2136196B2 (de) 1975-07-10
DE2136196A1 (de) 1972-02-10
JPS5016152B1 (fr) 1975-06-11
FR2101228B1 (fr) 1974-08-23
GB1298059A (en) 1972-11-29
CA921178A (en) 1973-02-13
US3770519A (en) 1973-11-06

Similar Documents

Publication Publication Date Title
AR204384A1 (fr)
AU2044470A (fr)
AU1473870A (fr)
AU1146470A (fr)
AU1517670A (fr)
AU2017870A (fr)
AU1833270A (fr)
AU1716970A (fr)
AU1326870A (fr)
AU2085370A (fr)
AU2130570A (fr)
AU1336970A (fr)
AR195465A1 (fr)
AU1591370A (fr)
AU1872870A (fr)
AU2144270A (fr)
AU1247570A (fr)
AU1328670A (fr)
AU1235770A (fr)
AU1343870A (fr)
AU1189670A (fr)
AU2131570A (fr)
AU2130770A (fr)
AU1581370A (fr)
AU1969370A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse