FR2090208A1 - - Google Patents

Info

Publication number
FR2090208A1
FR2090208A1 FR7118102A FR7118102A FR2090208A1 FR 2090208 A1 FR2090208 A1 FR 2090208A1 FR 7118102 A FR7118102 A FR 7118102A FR 7118102 A FR7118102 A FR 7118102A FR 2090208 A1 FR2090208 A1 FR 2090208A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7118102A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2090208A1 publication Critical patent/FR2090208A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10W74/131—
FR7118102A 1970-05-22 1971-05-19 Withdrawn FR2090208A1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3993770A 1970-05-22 1970-05-22

Publications (1)

Publication Number Publication Date
FR2090208A1 true FR2090208A1 (OSRAM) 1972-01-14

Family

ID=21908173

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7118102A Withdrawn FR2090208A1 (OSRAM) 1970-05-22 1971-05-19

Country Status (5)

Country Link
US (1) US3643136A (OSRAM)
DE (2) DE2125468A1 (OSRAM)
FR (1) FR2090208A1 (OSRAM)
GB (1) GB1356158A (OSRAM)
SE (1) SE374225B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2320634A1 (fr) * 1975-08-04 1977-03-04 Gen Electric Element semi-conducteur ayant une couche polymere de protection
FR2421464A1 (fr) * 1978-03-28 1979-10-26 Westinghouse Electric Corp Dispositif semi-conducteur encapsule

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329707A (en) * 1978-09-15 1982-05-11 Westinghouse Electric Corp. Glass-sealed power thyristor
JPS5936430B2 (ja) * 1980-01-17 1984-09-04 株式会社東芝 半導体装置
US4546376A (en) * 1983-09-30 1985-10-08 Citizen Watch Co., Ltd. Device for semiconductor integrated circuits
US4745455A (en) * 1986-05-16 1988-05-17 General Electric Company Silicon packages for power semiconductor devices
US5133795A (en) * 1986-11-04 1992-07-28 General Electric Company Method of making a silicon package for a power semiconductor device
US4987476A (en) * 1988-02-01 1991-01-22 General Instrument Corporation Brazed glass pre-passivated chip rectifier
US5034044A (en) * 1988-05-11 1991-07-23 General Electric Company Method of bonding a silicon package for a power semiconductor device
US7560739B2 (en) * 2004-06-29 2009-07-14 Intel Corporation Micro or below scale multi-layered heterostructure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (OSRAM) * 1961-07-12 1900-01-01
NL286978A (OSRAM) * 1961-12-27
US3320495A (en) * 1963-07-02 1967-05-16 Atomic Energy Commission Surface-barrier diode for detecting high energy particles and method for preparing same
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3337781A (en) * 1965-06-14 1967-08-22 Westinghouse Electric Corp Encapsulation means for a semiconductor device
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2320634A1 (fr) * 1975-08-04 1977-03-04 Gen Electric Element semi-conducteur ayant une couche polymere de protection
FR2421464A1 (fr) * 1978-03-28 1979-10-26 Westinghouse Electric Corp Dispositif semi-conducteur encapsule

Also Published As

Publication number Publication date
US3643136A (en) 1972-02-15
GB1356158A (en) 1974-06-12
DE2125468A1 (de) 1971-12-09
SE374225B (OSRAM) 1975-02-24
DE7119982U (de) 1971-09-30

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Legal Events

Date Code Title Description
ST Notification of lapse