FR2085357A1 - - Google Patents

Info

Publication number
FR2085357A1
FR2085357A1 FR7013263A FR7013263A FR2085357A1 FR 2085357 A1 FR2085357 A1 FR 2085357A1 FR 7013263 A FR7013263 A FR 7013263A FR 7013263 A FR7013263 A FR 7013263A FR 2085357 A1 FR2085357 A1 FR 2085357A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7013263A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7013263A priority Critical patent/FR2085357A1/fr
Priority to BE765188A priority patent/BE765188A/xx
Priority to DE19712117281 priority patent/DE2117281A1/de
Priority to NL7104861A priority patent/NL7104861A/xx
Priority to GB2669971*A priority patent/GB1327710A/en
Publication of FR2085357A1 publication Critical patent/FR2085357A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
FR7013263A 1970-04-13 1970-04-13 Withdrawn FR2085357A1 (en, 2012)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7013263A FR2085357A1 (en, 2012) 1970-04-13 1970-04-13
BE765188A BE765188A (fr) 1970-04-13 1971-04-02 Procede de fabrication de composants
DE19712117281 DE2117281A1 (de) 1970-04-13 1971-04-08 Verfahren zur Herstellung eines Halbleiterbauelementes
NL7104861A NL7104861A (en, 2012) 1970-04-13 1971-04-13
GB2669971*A GB1327710A (en) 1970-04-13 1971-04-19 Method of manufacturing semiconductor components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7013263A FR2085357A1 (en, 2012) 1970-04-13 1970-04-13

Publications (1)

Publication Number Publication Date
FR2085357A1 true FR2085357A1 (en, 2012) 1971-12-24

Family

ID=9053866

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7013263A Withdrawn FR2085357A1 (en, 2012) 1970-04-13 1970-04-13

Country Status (5)

Country Link
BE (1) BE765188A (en, 2012)
DE (1) DE2117281A1 (en, 2012)
FR (1) FR2085357A1 (en, 2012)
GB (1) GB1327710A (en, 2012)
NL (1) NL7104861A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276099A (en) 1978-10-11 1981-06-30 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fabrication of infra-red charge coupled devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1244668A (fr) * 1959-01-28 1960-10-28 Siemens Ag Procédé pour fabriquer un corps semi-conducteur et établir ses contacts
FR1356790A (fr) * 1962-08-27 1964-03-27 Intermetall Procédé pour la fabrication d'un corps sous forme de plaque de grande conductibilité avec une couche superficielle mince résistante monocristalline en matière semi-conductrice, et corps conformes à ceux obtenus par ledit procédé ou procédé similaire
FR1418640A (fr) * 1963-12-26 1965-11-19 Gen Electric Perfectionnements aux semi-conducteurs de commutation
US3261727A (en) * 1961-12-05 1966-07-19 Telefunken Patent Method of making semiconductor devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1244668A (fr) * 1959-01-28 1960-10-28 Siemens Ag Procédé pour fabriquer un corps semi-conducteur et établir ses contacts
US3261727A (en) * 1961-12-05 1966-07-19 Telefunken Patent Method of making semiconductor devices
FR1356790A (fr) * 1962-08-27 1964-03-27 Intermetall Procédé pour la fabrication d'un corps sous forme de plaque de grande conductibilité avec une couche superficielle mince résistante monocristalline en matière semi-conductrice, et corps conformes à ceux obtenus par ledit procédé ou procédé similaire
FR1418640A (fr) * 1963-12-26 1965-11-19 Gen Electric Perfectionnements aux semi-conducteurs de commutation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOL.116,JUIN 1969:"LOW-TEMPERATURE EPITAXIAL GROWTH OF SINGLE CRYSTALLINE SILICON FROM SILANE"D.RICHMAN ET AL.PAGES 872-873) *
EPITAXIAL GROWTH OF SINGLE CRYSTALLINE SILICON FROM SILANE"D.RICHMAN ET AL.PAGES 872-873) *
REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOL.116,JUIN 1969:"LOW-TEMPERATURE *

Also Published As

Publication number Publication date
GB1327710A (en) 1973-08-22
NL7104861A (en, 2012) 1971-10-15
BE765188A (fr) 1971-10-04
DE2117281A1 (de) 1971-10-28

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Legal Events

Date Code Title Description
ST Notification of lapse