FR2081021A1 - - Google Patents

Info

Publication number
FR2081021A1
FR2081021A1 FR7103659A FR7103659A FR2081021A1 FR 2081021 A1 FR2081021 A1 FR 2081021A1 FR 7103659 A FR7103659 A FR 7103659A FR 7103659 A FR7103659 A FR 7103659A FR 2081021 A1 FR2081021 A1 FR 2081021A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7103659A
Other languages
French (fr)
Other versions
FR2081021B1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2081021A1 publication Critical patent/FR2081021A1/fr
Application granted granted Critical
Publication of FR2081021B1 publication Critical patent/FR2081021B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
FR717103659A 1970-02-20 1971-01-27 Expired FR2081021B1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1297770A 1970-02-20 1970-02-20

Publications (2)

Publication Number Publication Date
FR2081021A1 true FR2081021A1 (https=) 1971-11-26
FR2081021B1 FR2081021B1 (https=) 1974-03-01

Family

ID=21757664

Family Applications (1)

Application Number Title Priority Date Filing Date
FR717103659A Expired FR2081021B1 (https=) 1970-02-20 1971-01-27

Country Status (4)

Country Link
US (1) US3676231A (https=)
JP (1) JPS4840805B1 (https=)
DE (1) DE2107991A1 (https=)
FR (1) FR2081021B1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959040A (en) * 1971-09-01 1976-05-25 Motorola, Inc. Compound diffused regions for emitter-coupled logic circuits
US4129090A (en) * 1973-02-28 1978-12-12 Hitachi, Ltd. Apparatus for diffusion into semiconductor wafers
US3966515A (en) * 1974-05-17 1976-06-29 Teledyne, Inc. Method for manufacturing high voltage field-effect transistors
DE2838928A1 (de) * 1978-09-07 1980-03-20 Ibm Deutschland Verfahren zum dotieren von siliciumkoerpern mit bor
US4234361A (en) * 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
US5494852A (en) * 1993-07-28 1996-02-27 Sony Electronics Inc. High capacity semiconductor dopant deposition/oxidization process using a single furnace cycle
DE19840866B4 (de) * 1998-08-31 2005-02-03 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zur Dotierung der externen Basisanschlußgebiete von Si-basierten Einfach-Polysilizium-npn-Bipolartransistoren
DE102012025429A1 (de) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1551367A (https=) * 1966-12-30 1968-12-27
DE1809683A1 (de) * 1967-11-22 1969-10-16 Itt Ind Gmbh Deutsche Diffusionsverfahren fuer Bor in einen Halbleiterkoerper aus Silicium

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1551367A (https=) * 1966-12-30 1968-12-27
DE1809683A1 (de) * 1967-11-22 1969-10-16 Itt Ind Gmbh Deutsche Diffusionsverfahren fuer Bor in einen Halbleiterkoerper aus Silicium

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"PROCEEDINGS OF THE IEEE"VOL.57,SEPTEMBRE 1969"THE INFLUENCE OF REACTION KINETICS BETWEEN BBR3 AND 02 ON THE UNIFORMITY OF BASE DIFFUSION"P.C.PAREKH ET D.R.GOLDSTEIN PAGES 1507-1512) *
KINETICS BETWEEN BBR3 AND 02 ON THE UNIFORMITY OF BASE DIFFUSION"P.C.PAREKH ET D.R.GOLDSTEIN *
PAGES 1507-1512) *
REVUE AMERICAINE"PROCEEDINGS OF THE IEEE"VOL.57,SEPTEMBRE 1969"THE INFLUENCE OF REACTION *

Also Published As

Publication number Publication date
US3676231A (en) 1972-07-11
JPS4840805B1 (https=) 1973-12-03
DE2107991A1 (de) 1971-08-26
FR2081021B1 (https=) 1974-03-01

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Legal Events

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