FR2080914B1 - - Google Patents

Info

Publication number
FR2080914B1
FR2080914B1 FR7100571A FR7100571A FR2080914B1 FR 2080914 B1 FR2080914 B1 FR 2080914B1 FR 7100571 A FR7100571 A FR 7100571A FR 7100571 A FR7100571 A FR 7100571A FR 2080914 B1 FR2080914 B1 FR 2080914B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7100571A
Other languages
French (fr)
Other versions
FR2080914A1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2080914A1 publication Critical patent/FR2080914A1/fr
Application granted granted Critical
Publication of FR2080914B1 publication Critical patent/FR2080914B1/fr
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2637Circuits therefor for testing other individual devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49004Electrical device making including measuring or testing of device or component part

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
FR7100571A 1970-01-19 1971-01-08 Expired FR2080914B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US377170A 1970-01-19 1970-01-19

Publications (2)

Publication Number Publication Date
FR2080914A1 FR2080914A1 (OSRAM) 1971-11-26
FR2080914B1 true FR2080914B1 (OSRAM) 1974-10-31

Family

ID=21707508

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7100571A Expired FR2080914B1 (OSRAM) 1970-01-19 1971-01-08

Country Status (7)

Country Link
US (1) US3605015A (OSRAM)
JP (1) JPS509376B1 (OSRAM)
BE (1) BE760897A (OSRAM)
FR (1) FR2080914B1 (OSRAM)
GB (1) GB1319032A (OSRAM)
NL (1) NL7100701A (OSRAM)
SU (1) SU504516A1 (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3731192A (en) * 1971-05-28 1973-05-01 Bell Telephone Labor Inc Method and apparatus for analyzing semiconductors
US4208624A (en) * 1978-08-09 1980-06-17 Bell Telephone Laboratories, Incorporated Method and apparatus for investigating dielectric semiconductor materials
JP2886176B2 (ja) * 1989-03-23 1999-04-26 三菱電機株式会社 埋め込みチャネルの物性特性測定法
HU213198B (en) * 1990-07-12 1997-03-28 Semilab Felvezetoe Fiz Lab Rt Method and apparatus for measuring concentration of charge carriers in semiconductor materials
JP2702807B2 (ja) * 1990-08-09 1998-01-26 東芝セラミックス株式会社 半導体中の深い不純物準位の測定方法及びその装置
DK146692D0 (da) * 1992-12-07 1992-12-07 Petr Viscor Fremgangsmaade og apparat til bestemmelse af karakteristiske elektriske materialeparametre for halvledende materialer
US5521839A (en) * 1993-09-02 1996-05-28 Georgia Tech Research Corporation Deep level transient spectroscopy (DLTS) system and method
US5493231A (en) * 1994-10-07 1996-02-20 University Of North Carolina Method and apparatus for measuring the barrier height distribution in an insulated gate field effect transistor
DE10126300C1 (de) * 2001-05-30 2003-01-23 Infineon Technologies Ag Verfahren und Vorrichtung zum Messen einer Temperatur in einem integrierten Halbleiterbauelement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2942329A (en) * 1956-09-25 1960-06-28 Ibm Semiconductor device fabrication

Also Published As

Publication number Publication date
JPS46271A (OSRAM) 1971-08-24
FR2080914A1 (OSRAM) 1971-11-26
JPS509376B1 (OSRAM) 1975-04-12
DE2102182A1 (de) 1971-07-22
DE2102182B2 (de) 1972-11-02
GB1319032A (en) 1973-05-31
NL7100701A (OSRAM) 1971-07-21
SU504516A1 (OSRAM) 1976-02-25
BE760897A (fr) 1971-05-27
US3605015A (en) 1971-09-14

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Legal Events

Date Code Title Description
ST Notification of lapse