FR2080610A1 - - Google Patents

Info

Publication number
FR2080610A1
FR2080610A1 FR7105142A FR7105142A FR2080610A1 FR 2080610 A1 FR2080610 A1 FR 2080610A1 FR 7105142 A FR7105142 A FR 7105142A FR 7105142 A FR7105142 A FR 7105142A FR 2080610 A1 FR2080610 A1 FR 2080610A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7105142A
Other languages
French (fr)
Other versions
FR2080610B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2080610A1 publication Critical patent/FR2080610A1/fr
Application granted granted Critical
Publication of FR2080610B1 publication Critical patent/FR2080610B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
FR7105142A 1970-02-19 1971-02-16 Expired FR2080610B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702007752 DE2007752B2 (de) 1970-02-19 1970-02-19 Verfahren zum Herstellen von dotiertem Halbleitermaterial

Publications (2)

Publication Number Publication Date
FR2080610A1 true FR2080610A1 (enrdf_load_stackoverflow) 1971-11-19
FR2080610B1 FR2080610B1 (enrdf_load_stackoverflow) 1976-04-16

Family

ID=5762769

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7105142A Expired FR2080610B1 (enrdf_load_stackoverflow) 1970-02-19 1971-02-16

Country Status (8)

Country Link
JP (1) JPS5338597B1 (enrdf_load_stackoverflow)
AT (1) AT338335B (enrdf_load_stackoverflow)
CH (1) CH519249A (enrdf_load_stackoverflow)
DE (1) DE2007752B2 (enrdf_load_stackoverflow)
FR (1) FR2080610B1 (enrdf_load_stackoverflow)
GB (1) GB1289432A (enrdf_load_stackoverflow)
NL (1) NL7102176A (enrdf_load_stackoverflow)
SE (1) SE366227B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0316940A1 (en) * 1987-11-20 1989-05-24 Fujitsu Limited Method for doping impurity material into a semiconductor substrate for fabricating a semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262021C2 (de) * 1972-12-19 1982-12-30 Degussa Ag, 6000 Frankfurt Verfahren zur Dotierung von Halbleitersilicium
EP0104412B1 (en) * 1982-09-23 1988-01-07 Allied Corporation Polymeric boron-nitrogen dopant
DE4013929C2 (de) * 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3355291A (en) * 1963-10-08 1967-11-28 Texas Instruments Inc Application of glass to semiconductor devices
CH465065A (fr) * 1967-05-10 1968-11-15 Ncr Co Procédé de fabrication d'un dispositif semi-conducteur
DE2012927A1 (de) * 1969-03-20 1970-09-24 Matsushita Electronics Corp., Kadoma, Osaka (Japan) Verfahren zum Eindiffundieren von Verunreinigungselementen in einen Halbleiter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3355291A (en) * 1963-10-08 1967-11-28 Texas Instruments Inc Application of glass to semiconductor devices
CH465065A (fr) * 1967-05-10 1968-11-15 Ncr Co Procédé de fabrication d'un dispositif semi-conducteur
DE2012927A1 (de) * 1969-03-20 1970-09-24 Matsushita Electronics Corp., Kadoma, Osaka (Japan) Verfahren zum Eindiffundieren von Verunreinigungselementen in einen Halbleiter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0316940A1 (en) * 1987-11-20 1989-05-24 Fujitsu Limited Method for doping impurity material into a semiconductor substrate for fabricating a semiconductor device

Also Published As

Publication number Publication date
DE2007752C3 (enrdf_load_stackoverflow) 1979-04-05
GB1289432A (enrdf_load_stackoverflow) 1972-09-20
AT338335B (de) 1977-08-25
DE2007752A1 (de) 1971-08-26
DE2007752B2 (de) 1978-07-27
JPS5338597B1 (enrdf_load_stackoverflow) 1978-10-16
SE366227B (enrdf_load_stackoverflow) 1974-04-22
FR2080610B1 (enrdf_load_stackoverflow) 1976-04-16
NL7102176A (enrdf_load_stackoverflow) 1971-08-23
ATA82571A (de) 1976-12-15
CH519249A (de) 1972-02-15

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Legal Events

Date Code Title Description
ST Notification of lapse