FR2079373B1 - - Google Patents
Info
- Publication number
- FR2079373B1 FR2079373B1 FR7102571A FR7102571A FR2079373B1 FR 2079373 B1 FR2079373 B1 FR 2079373B1 FR 7102571 A FR7102571 A FR 7102571A FR 7102571 A FR7102571 A FR 7102571A FR 2079373 B1 FR2079373 B1 FR 2079373B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702006276 DE2006276A1 (de) | 1970-02-12 | 1970-02-12 | Verfahren zum rationellen Herstellen von Feldeffekt Transistoren mit isolierten Feldelektroden, insbesondere mit phosphor kompensierten Isolierschichten aus SiO tief 2 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2079373A1 FR2079373A1 (enExample) | 1971-11-12 |
| FR2079373B1 true FR2079373B1 (enExample) | 1973-11-23 |
Family
ID=5762018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7102571A Expired FR2079373B1 (enExample) | 1970-02-12 | 1971-01-21 |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2006276A1 (enExample) |
| FR (1) | FR2079373B1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2371777A1 (fr) | 1976-11-18 | 1978-06-16 | Loic Henry | Procede de fabrication d'une barriere de diffusion en nitrure de silicium sur un substrat de semiconducteur, en particulier du type iii-v |
| US4731293A (en) * | 1986-06-20 | 1988-03-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabrication of devices using phosphorus glasses |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1403466A (fr) * | 1963-08-16 | 1965-06-18 | Licentia Gmbh | Procédé d'oxydation de silicium ou d'une disposition de semi-conducteurs comportant une ou plusieurs transitions pn |
| FR1545326A (fr) * | 1966-11-25 | 1968-11-08 | Teledyne Ind | Transistor à effet de champ à grille isolée |
-
1970
- 1970-02-12 DE DE19702006276 patent/DE2006276A1/de active Pending
-
1971
- 1971-01-21 FR FR7102571A patent/FR2079373B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2079373A1 (enExample) | 1971-11-12 |
| DE2006276A1 (de) | 1971-08-26 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |