FR2077621A1 - - Google Patents

Info

Publication number
FR2077621A1
FR2077621A1 FR7102558A FR7102558A FR2077621A1 FR 2077621 A1 FR2077621 A1 FR 2077621A1 FR 7102558 A FR7102558 A FR 7102558A FR 7102558 A FR7102558 A FR 7102558A FR 2077621 A1 FR2077621 A1 FR 2077621A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7102558A
Other languages
French (fr)
Other versions
FR2077621B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2077621A1 publication Critical patent/FR2077621A1/fr
Application granted granted Critical
Publication of FR2077621B1 publication Critical patent/FR2077621B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
FR7102558A 1970-01-26 1971-01-26 Expired FR2077621B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US580570A 1970-01-26 1970-01-26

Publications (2)

Publication Number Publication Date
FR2077621A1 true FR2077621A1 (enrdf_load_stackoverflow) 1971-10-29
FR2077621B1 FR2077621B1 (enrdf_load_stackoverflow) 1973-11-23

Family

ID=21717842

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7102558A Expired FR2077621B1 (enrdf_load_stackoverflow) 1970-01-26 1971-01-26

Country Status (4)

Country Link
DE (1) DE2103389A1 (enrdf_load_stackoverflow)
FR (1) FR2077621B1 (enrdf_load_stackoverflow)
GB (1) GB1351867A (enrdf_load_stackoverflow)
SE (1) SE372375B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
US4605451A (en) * 1984-08-08 1986-08-12 Westinghouse Brake And Signal Company Limited Process for making thyristor devices
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1297586A (fr) * 1960-09-20 1962-06-29 Western Electric Co Dispositif semi-conducteur et procédé de fabrication
FR1321379A (fr) * 1961-05-10 1963-03-15 Siemens Ag Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin
GB967069A (en) * 1959-12-30 1964-08-19 Ibm Semiconductor junctions having a retrograde distribution of impurities
FR1515661A (fr) * 1966-03-28 1968-03-01 Ass Elect Ind Perfectionnements aux procédés de fabrication de dispositifs semiconducteurs et produits obtenus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967069A (en) * 1959-12-30 1964-08-19 Ibm Semiconductor junctions having a retrograde distribution of impurities
FR1297586A (fr) * 1960-09-20 1962-06-29 Western Electric Co Dispositif semi-conducteur et procédé de fabrication
FR1321379A (fr) * 1961-05-10 1963-03-15 Siemens Ag Procédé pour réaliser une jonction p-n dans un dispositif à semi-conducteur monocristallin
FR1515661A (fr) * 1966-03-28 1968-03-01 Ass Elect Ind Perfectionnements aux procédés de fabrication de dispositifs semiconducteurs et produits obtenus

Also Published As

Publication number Publication date
DE2103389A1 (de) 1971-08-05
GB1351867A (en) 1974-05-01
FR2077621B1 (enrdf_load_stackoverflow) 1973-11-23
SE372375B (enrdf_load_stackoverflow) 1974-12-16

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Legal Events

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