FR2077312A1 - - Google Patents

Info

Publication number
FR2077312A1
FR2077312A1 FR7047132A FR7047132A FR2077312A1 FR 2077312 A1 FR2077312 A1 FR 2077312A1 FR 7047132 A FR7047132 A FR 7047132A FR 7047132 A FR7047132 A FR 7047132A FR 2077312 A1 FR2077312 A1 FR 2077312A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7047132A
Other versions
FR2077312B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2077312A1 publication Critical patent/FR2077312A1/fr
Application granted granted Critical
Publication of FR2077312B1 publication Critical patent/FR2077312B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H01L27/0794—Combinations of capacitors and resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR707047132A 1970-01-26 1970-12-17 Expired FR2077312B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US545370A 1970-01-26 1970-01-26

Publications (2)

Publication Number Publication Date
FR2077312A1 true FR2077312A1 (fr) 1971-10-22
FR2077312B1 FR2077312B1 (fr) 1974-02-15

Family

ID=21715953

Family Applications (1)

Application Number Title Priority Date Filing Date
FR707047132A Expired FR2077312B1 (fr) 1970-01-26 1970-12-17

Country Status (7)

Country Link
US (1) US3619735A (fr)
JP (1) JPS49756B1 (fr)
DE (1) DE2101278C2 (fr)
FR (1) FR2077312B1 (fr)
GB (1) GB1315583A (fr)
NL (1) NL7100928A (fr)
SE (1) SE370466B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082870U (ja) * 1983-11-14 1985-06-08 日新建鉄株式会社 公衆電話用引出し式踏み台
US5059897A (en) * 1989-12-07 1991-10-22 Texas Instruments Incorporated Method and apparatus for testing passive substrates for integrated circuit mounting
SE470415B (sv) * 1992-07-06 1994-02-14 Ericsson Telefon Ab L M Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator
US6849909B1 (en) * 2000-09-28 2005-02-01 Intel Corporation Method and apparatus for weak inversion mode MOS decoupling capacitor
US7600208B1 (en) 2007-01-31 2009-10-06 Cadence Design Systems, Inc. Automatic placement of decoupling capacitors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2000270A1 (fr) * 1968-01-15 1969-09-05 Ibm Procede de fabrication de corps semi-conducteurs

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1047388A (fr) * 1962-10-05
US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection
US3423653A (en) * 1965-09-14 1969-01-21 Westinghouse Electric Corp Integrated complementary transistor structure with equivalent performance characteristics
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
FR1535920A (fr) * 1966-12-13 1968-08-09 Texas Instruments Inc Procédé de fabrication de circuits intégrés
US3538397A (en) * 1967-05-09 1970-11-03 Motorola Inc Distributed semiconductor power supplies and decoupling capacitor therefor
US3465215A (en) * 1967-06-30 1969-09-02 Texas Instruments Inc Process for fabricating monolithic circuits having matched complementary transistors and product
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2000270A1 (fr) * 1968-01-15 1969-09-05 Ibm Procede de fabrication de corps semi-conducteurs

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN"VOLUME 11,MARS 1969"FORMING BURIED LAYER BY DIFFUSION"O.R.VIVA ET E.S.WAJDA PAGES 1342-1343 *
*REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE BULLETIN"VOLUME 11,AVRIL 1969,"SEMICONDUCTOR DEVICE WITH VERTICAL RESISTOR"H.A.GELLER PAGE 1390) *
BULLETIN"VOLUME 11,AVRIL 1969,"SEMICONDUCTOR DEVICE WITH VERTICAL RESISTOR"H.A.GELLER PAGE 1390) *
DIFFUSION"O.R.VIVA ET E.S.WAJDA PAGES 1342-1343 *
REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN"VOLUME 11,MARS 1969"FORMING BURIED LAYER BY *
REVUE AMERICAINE"IBM TECHNICAL DISCLOSURE *

Also Published As

Publication number Publication date
GB1315583A (en) 1973-05-02
NL7100928A (fr) 1971-07-28
FR2077312B1 (fr) 1974-02-15
DE2101278A1 (de) 1971-08-05
JPS49756B1 (fr) 1974-01-09
DE2101278C2 (de) 1982-05-06
SE370466B (fr) 1974-10-14
US3619735A (en) 1971-11-09

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Legal Events

Date Code Title Description
ST Notification of lapse