FR2051687A1 - - Google Patents
Info
- Publication number
- FR2051687A1 FR2051687A1 FR7025428A FR7025428A FR2051687A1 FR 2051687 A1 FR2051687 A1 FR 2051687A1 FR 7025428 A FR7025428 A FR 7025428A FR 7025428 A FR7025428 A FR 7025428A FR 2051687 A1 FR2051687 A1 FR 2051687A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84105369A | 1969-07-11 | 1969-07-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2051687A1 true FR2051687A1 (https=) | 1971-04-09 |
| FR2051687B1 FR2051687B1 (https=) | 1976-03-19 |
Family
ID=25283899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7025428A Expired FR2051687B1 (https=) | 1969-07-11 | 1970-07-08 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3632436A (https=) |
| JP (1) | JPS5417631B1 (https=) |
| BE (1) | BE752608A (https=) |
| DE (1) | DE2033532C3 (https=) |
| FR (1) | FR2051687B1 (https=) |
| GB (1) | GB1317014A (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
| DE2207012C2 (de) * | 1972-02-15 | 1985-10-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Kontaktierung von Halbleiterbauelementen |
| US3769688A (en) * | 1972-04-21 | 1973-11-06 | Rca Corp | Method of making an electrically-insulating seal between a metal body and a semiconductor device |
| US3925572A (en) * | 1972-10-12 | 1975-12-09 | Ncr Co | Multilevel conductor structure and method |
| US4106051A (en) * | 1972-11-08 | 1978-08-08 | Ferranti Limited | Semiconductor devices |
| US3900344A (en) * | 1973-03-23 | 1975-08-19 | Ibm | Novel integratable schottky barrier structure and method for the fabrication thereof |
| US4096510A (en) * | 1974-08-19 | 1978-06-20 | Matsushita Electric Industrial Co., Ltd. | Thermal printing head |
| US4024569A (en) * | 1975-01-08 | 1977-05-17 | Rca Corporation | Semiconductor ohmic contact |
| JPS5268376A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Semiconductor device |
| DE2555187A1 (de) * | 1975-12-08 | 1977-06-16 | Siemens Ag | Verfahren zum herstellen einer halbleitervorrichtung |
| US4600933A (en) * | 1976-12-14 | 1986-07-15 | Standard Microsystems Corporation | Semiconductor integrated circuit structure with selectively modified insulation layer |
| JPS543480A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4297393A (en) * | 1980-02-28 | 1981-10-27 | Rca Corporation | Method of applying thin metal deposits to a substrate |
| DE3268922D1 (en) * | 1981-05-04 | 1986-03-20 | Motorola Inc | Low resistivity composite metallization for semiconductor devices and method therefor |
| US4407860A (en) * | 1981-06-30 | 1983-10-04 | International Business Machines Corporation | Process for producing an improved quality electrolessly deposited nickel layer |
| US4648175A (en) * | 1985-06-12 | 1987-03-10 | Ncr Corporation | Use of selectively deposited tungsten for contact formation and shunting metallization |
| DE3681689D1 (en) * | 1985-10-22 | 1991-10-31 | Siemens Ag, 8000 Muenchen, De | Integrated semiconductor memory circuit for security or credit system |
| US4910049A (en) * | 1986-12-15 | 1990-03-20 | International Business Machines Corporation | Conditioning a dielectric substrate for plating thereon |
| EP0348119B1 (en) * | 1988-06-23 | 1997-08-13 | Kabushiki Kaisha Toshiba | Method of processing metal connectors on semi-conductor devices |
| KR101056544B1 (ko) * | 2003-08-19 | 2011-08-11 | 아반토르 퍼포먼스 머티리얼스, 인크. | 마이크로전자 기판용 박리 및 세정 조성물 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL303035A (https=) * | 1963-02-06 | 1900-01-01 | ||
| FR1535286A (fr) * | 1966-09-26 | 1968-08-02 | Gen Micro Electronics | Transistor semi-conducteur à oxyde métallique à effet de champ et son procédé de fabrication |
| NL6804240A (https=) * | 1967-03-27 | 1968-09-30 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL212349A (https=) * | 1955-04-22 | 1900-01-01 | ||
| US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
| GB1030540A (en) * | 1964-01-02 | 1966-05-25 | Gen Electric | Improvements in and relating to semi-conductor diodes |
| US3523038A (en) * | 1965-06-02 | 1970-08-04 | Texas Instruments Inc | Process for making ohmic contact to planar germanium semiconductor devices |
| US3460007A (en) * | 1967-07-03 | 1969-08-05 | Rca Corp | Semiconductor junction device |
-
1969
- 1969-07-11 US US841053A patent/US3632436A/en not_active Expired - Lifetime
-
1970
- 1970-06-26 BE BE752608D patent/BE752608A/xx unknown
- 1970-07-03 GB GB3238870A patent/GB1317014A/en not_active Expired
- 1970-07-07 DE DE702033532A patent/DE2033532C3/de not_active Expired
- 1970-07-08 FR FR7025428A patent/FR2051687B1/fr not_active Expired
- 1970-07-08 JP JP5981570A patent/JPS5417631B1/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL303035A (https=) * | 1963-02-06 | 1900-01-01 | ||
| FR1535286A (fr) * | 1966-09-26 | 1968-08-02 | Gen Micro Electronics | Transistor semi-conducteur à oxyde métallique à effet de champ et son procédé de fabrication |
| NL6804240A (https=) * | 1967-03-27 | 1968-09-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2033532C3 (de) | 1979-03-08 |
| BE752608A (fr) | 1970-12-01 |
| DE2033532B2 (de) | 1978-07-06 |
| US3632436A (en) | 1972-01-04 |
| JPS5417631B1 (https=) | 1979-07-02 |
| FR2051687B1 (https=) | 1976-03-19 |
| GB1317014A (en) | 1973-05-16 |
| DE2033532A1 (de) | 1971-01-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |