FR2046679A5 - Electroless nickel plating of silicon - transistors - Google Patents
Electroless nickel plating of silicon - transistorsInfo
- Publication number
- FR2046679A5 FR2046679A5 FR7018982A FR7018982A FR2046679A5 FR 2046679 A5 FR2046679 A5 FR 2046679A5 FR 7018982 A FR7018982 A FR 7018982A FR 7018982 A FR7018982 A FR 7018982A FR 2046679 A5 FR2046679 A5 FR 2046679A5
- Authority
- FR
- France
- Prior art keywords
- degrees
- approx
- rinsed
- nh4f
- pickled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052759 nickel Inorganic materials 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 239000004809 Teflon Substances 0.000 abstract 1
- 229920006362 Teflon® Polymers 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01032—Germanium [Ge]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01052—Tellurium [Te]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01072—Hafnium [Hf]
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- H01L2924/01075—Rhenium [Re]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/01079—Gold [Au]
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- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemically Coating (AREA)
Abstract
Modified pretreatment technique gives consistently good results with finer crystal structure and less variation between 'n' and 'p' zones. Soft solder or hard Au-Ge solder can be used to secure leads. Parts are treated on 'Teflon' (R.T.M.) trays or quartz plates for fumase operation, pickled in NH4F/HF mixture, pref. 6/1, rinsed and preheated to approx. 95 degrees C in deionized water, electroless Ni plated in conventional bath at about 95 degrees C for approx. 7 mins., rinsed and dried with acetone, heated in atmosphere to approx. 790 degrees C in under 15 min. and baked for 10 min., pickled in HCl and NH4F/HF, rinsed and preheated, replated for 5 min. at 95 degrees C and protected by Au electroplate. Process gives Ni coating thickness of 0.700 mu m first coat + 0.850 mu m second coat.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7018982A FR2046679A5 (en) | 1970-05-25 | 1970-05-25 | Electroless nickel plating of silicon - transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7018982A FR2046679A5 (en) | 1970-05-25 | 1970-05-25 | Electroless nickel plating of silicon - transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2046679A5 true FR2046679A5 (en) | 1971-03-05 |
Family
ID=9056056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7018982A Expired FR2046679A5 (en) | 1970-05-25 | 1970-05-25 | Electroless nickel plating of silicon - transistors |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2046679A5 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6599563B2 (en) * | 2001-01-02 | 2003-07-29 | J.G. Systems Inc. | Method and apparatus for improving interfacial chemical reactions in electroless depositions of metals |
-
1970
- 1970-05-25 FR FR7018982A patent/FR2046679A5/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6599563B2 (en) * | 2001-01-02 | 2003-07-29 | J.G. Systems Inc. | Method and apparatus for improving interfacial chemical reactions in electroless depositions of metals |
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Legal Events
Date | Code | Title | Description |
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ST | Notification of lapse |