FR2041027A1 - - Google Patents

Info

Publication number
FR2041027A1
FR2041027A1 FR6944185A FR6944185A FR2041027A1 FR 2041027 A1 FR2041027 A1 FR 2041027A1 FR 6944185 A FR6944185 A FR 6944185A FR 6944185 A FR6944185 A FR 6944185A FR 2041027 A1 FR2041027 A1 FR 2041027A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR6944185A
Other versions
FR2041027B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2041027A1 publication Critical patent/FR2041027A1/fr
Application granted granted Critical
Publication of FR2041027B1 publication Critical patent/FR2041027B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1028Double base diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
FR6944185A 1968-12-20 1969-12-19 Expired FR2041027B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43093347A JPS4933432B1 (fr) 1968-12-20 1968-12-20

Publications (2)

Publication Number Publication Date
FR2041027A1 true FR2041027A1 (fr) 1971-01-29
FR2041027B1 FR2041027B1 (fr) 1974-03-15

Family

ID=14079721

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6944185A Expired FR2041027B1 (fr) 1968-12-20 1969-12-19

Country Status (4)

Country Link
US (1) US3657616A (fr)
JP (1) JPS4933432B1 (fr)
FR (1) FR2041027B1 (fr)
GB (1) GB1285748A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550890A1 (fr) * 1983-08-17 1985-02-22 Thomson Csf Matrice de commutation de signaux electriques hyperfrequences

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3811074A (en) * 1971-04-10 1974-05-14 Nippon Telegraph & Telephone Semiconductor device and apparatus using the same
JPS5233405A (en) * 1975-09-10 1977-03-14 Oki Electric Ind Co Ltd Semiconductor device
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
CA1131800A (fr) * 1978-12-20 1982-09-14 Bernard T. Murphy Commutateur haute tension a semiconducteur a jonction
CH659151A5 (de) * 1978-12-20 1986-12-31 Western Electric Co Festkoerperschalter mit einem halbleiterkoerper und schaltungsanordnung mit wenigstens zwei festkoerperschaltern.
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
NL8220133A (nl) * 1981-03-27 1983-02-01 Western Electric Co Gepoorte diodeschakelaar.

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1164997A (fr) * 1956-01-23 1958-10-16 Siemens Ag Semi-conducteur avec plusieurs électrodes en émetteurs et plusieurs points de fonctionnement stables
GB1076919A (en) * 1966-06-03 1967-07-26 Ibm Improvements in digital data stores
US3436617A (en) * 1966-09-01 1969-04-01 Motorola Inc Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2832898A (en) * 1954-07-12 1958-04-29 Rca Corp Time delay transistor trigger circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1164997A (fr) * 1956-01-23 1958-10-16 Siemens Ag Semi-conducteur avec plusieurs électrodes en émetteurs et plusieurs points de fonctionnement stables
GB1076919A (en) * 1966-06-03 1967-07-26 Ibm Improvements in digital data stores
US3436617A (en) * 1966-09-01 1969-04-01 Motorola Inc Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550890A1 (fr) * 1983-08-17 1985-02-22 Thomson Csf Matrice de commutation de signaux electriques hyperfrequences
EP0138637A1 (fr) * 1983-08-17 1985-04-24 Thomson-Csf Matrice de commutation de signaux électriques hyperfréquences
US4682127A (en) * 1983-08-17 1987-07-21 Thomson-Csf Ultra-high frequency signal switching matrix having active component switching junctions

Also Published As

Publication number Publication date
GB1285748A (en) 1972-08-16
FR2041027B1 (fr) 1974-03-15
JPS4933432B1 (fr) 1974-09-06
US3657616A (en) 1972-04-18

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Legal Events

Date Code Title Description
ST Notification of lapse