FR2038141B1 - - Google Patents

Info

Publication number
FR2038141B1
FR2038141B1 FR707004812A FR7004812A FR2038141B1 FR 2038141 B1 FR2038141 B1 FR 2038141B1 FR 707004812 A FR707004812 A FR 707004812A FR 7004812 A FR7004812 A FR 7004812A FR 2038141 B1 FR2038141 B1 FR 2038141B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR707004812A
Other versions
FR2038141A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2038141A1 publication Critical patent/FR2038141A1/fr
Application granted granted Critical
Publication of FR2038141B1 publication Critical patent/FR2038141B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
FR707004812A 1969-04-02 1970-02-11 Expired FR2038141B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81261369A 1969-04-02 1969-04-02

Publications (2)

Publication Number Publication Date
FR2038141A1 FR2038141A1 (fr) 1971-01-08
FR2038141B1 true FR2038141B1 (fr) 1973-07-13

Family

ID=25210122

Family Applications (1)

Application Number Title Priority Date Filing Date
FR707004812A Expired FR2038141B1 (fr) 1969-04-02 1970-02-11

Country Status (6)

Country Link
US (1) US3588635A (fr)
JP (1) JPS5016628B1 (fr)
DE (1) DE2015816A1 (fr)
FR (1) FR2038141B1 (fr)
NL (1) NL7004621A (fr)
YU (1) YU32336B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974516A (en) * 1970-11-21 1976-08-10 U.S. Philips Corporation Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method
JPS5214944B1 (fr) * 1971-06-04 1977-04-25
JPS53128281A (en) 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
JPS5943824B2 (ja) * 1982-03-03 1984-10-24 三菱電機株式会社 半導体集積回路装置
JPS60248063A (ja) * 1984-05-23 1985-12-07 Fuji Xerox Co Ltd 密着型イメ−ジセンサ
EP1149420B1 (fr) * 1999-10-11 2015-03-04 Creator Technology B.V. Circuit integre

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1484323A (fr) * 1965-06-22 1967-06-09 Philips Nv Procédé de fabrication d'un dispositif semi-conducteur avec transistors à effet de champ et à électrode de porte isolée
US3457435A (en) * 1965-12-21 1969-07-22 Rca Corp Complementary field-effect transistor transmission gate

Also Published As

Publication number Publication date
YU32336B (en) 1974-08-31
US3588635A (en) 1971-06-28
YU17670A (en) 1974-02-28
JPS5016628B1 (fr) 1975-06-14
FR2038141A1 (fr) 1971-01-08
DE2015816A1 (de) 1970-10-15
NL7004621A (fr) 1970-10-06

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Legal Events

Date Code Title Description
ST Notification of lapse