FR2038141A1 - - Google Patents
Info
- Publication number
- FR2038141A1 FR2038141A1 FR7004812A FR7004812A FR2038141A1 FR 2038141 A1 FR2038141 A1 FR 2038141A1 FR 7004812 A FR7004812 A FR 7004812A FR 7004812 A FR7004812 A FR 7004812A FR 2038141 A1 FR2038141 A1 FR 2038141A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81261369A | 1969-04-02 | 1969-04-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2038141A1 true FR2038141A1 (fr) | 1971-01-08 |
FR2038141B1 FR2038141B1 (fr) | 1973-07-13 |
Family
ID=25210122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR707004812A Expired FR2038141B1 (fr) | 1969-04-02 | 1970-02-11 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3588635A (fr) |
JP (1) | JPS5016628B1 (fr) |
DE (1) | DE2015816A1 (fr) |
FR (1) | FR2038141B1 (fr) |
NL (1) | NL7004621A (fr) |
YU (1) | YU32336B (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3974516A (en) * | 1970-11-21 | 1976-08-10 | U.S. Philips Corporation | Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method |
JPS5214944B1 (fr) * | 1971-06-04 | 1977-04-25 | ||
JPS53128281A (en) | 1977-04-15 | 1978-11-09 | Hitachi Ltd | Insulated gate field effect type semiconductor device for large power |
JPS5943824B2 (ja) * | 1982-03-03 | 1984-10-24 | 三菱電機株式会社 | 半導体集積回路装置 |
JPS60248063A (ja) * | 1984-05-23 | 1985-12-07 | Fuji Xerox Co Ltd | 密着型イメ−ジセンサ |
WO2001027998A1 (fr) * | 1999-10-11 | 2001-04-19 | Koninklijke Philips Electronics N.V. | Circuit integre |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1484323A (fr) * | 1965-06-22 | 1967-06-09 | Philips Nv | Procédé de fabrication d'un dispositif semi-conducteur avec transistors à effet de champ et à électrode de porte isolée |
FR1505273A (fr) * | 1965-12-21 | 1967-12-08 | Rca Corp | Porte de transmission à transistors |
-
1969
- 1969-04-02 US US812613A patent/US3588635A/en not_active Expired - Lifetime
-
1970
- 1970-01-26 YU YU0176/70A patent/YU32336B/xx unknown
- 1970-02-11 FR FR707004812A patent/FR2038141B1/fr not_active Expired
- 1970-04-01 JP JP45027766A patent/JPS5016628B1/ja active Pending
- 1970-04-01 NL NL7004621A patent/NL7004621A/xx unknown
- 1970-04-02 DE DE19702015816 patent/DE2015816A1/de active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1484323A (fr) * | 1965-06-22 | 1967-06-09 | Philips Nv | Procédé de fabrication d'un dispositif semi-conducteur avec transistors à effet de champ et à électrode de porte isolée |
FR1505273A (fr) * | 1965-12-21 | 1967-12-08 | Rca Corp | Porte de transmission à transistors |
Non-Patent Citations (1)
Title |
---|
REVUE AMERICAINE "SEMICONDUCTOR PRODUCTS AND SOLID STATE TECHNOLOGY" VOL.11, MARS 1968 "A SURVEY OF FIELD EFFECT STRUCTURES" J. LELAND SEELY PAGES 36-40 * |
Also Published As
Publication number | Publication date |
---|---|
DE2015816A1 (de) | 1970-10-15 |
FR2038141B1 (fr) | 1973-07-13 |
US3588635A (en) | 1971-06-28 |
NL7004621A (fr) | 1970-10-06 |
YU32336B (en) | 1974-08-31 |
YU17670A (en) | 1974-02-28 |
JPS5016628B1 (fr) | 1975-06-14 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |