FR2037280A1 - - Google Patents
Info
- Publication number
- FR2037280A1 FR2037280A1 FR7011131A FR7011131A FR2037280A1 FR 2037280 A1 FR2037280 A1 FR 2037280A1 FR 7011131 A FR7011131 A FR 7011131A FR 7011131 A FR7011131 A FR 7011131A FR 2037280 A1 FR2037280 A1 FR 2037280A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H10P14/6334—
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- H10P14/6922—
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- H10P32/141—
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- H10P32/171—
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- H10P95/00—
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- H10P14/6923—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44024027A JPS5116311B1 (cg-RX-API-DMAC10.html) | 1969-03-28 | 1969-03-28 | |
| JP44024028A JPS5122347B1 (cg-RX-API-DMAC10.html) | 1969-03-28 | 1969-03-28 | |
| JP2402969 | 1969-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2037280A1 true FR2037280A1 (cg-RX-API-DMAC10.html) | 1970-12-31 |
| FR2037280B1 FR2037280B1 (cg-RX-API-DMAC10.html) | 1974-10-11 |
Family
ID=27284487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7011131A Expired FR2037280B1 (cg-RX-API-DMAC10.html) | 1969-03-28 | 1970-03-27 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2014903B2 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2037280B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1277988A (cg-RX-API-DMAC10.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2189876A1 (en) * | 1972-06-23 | 1974-01-25 | Anvar | Radiation resistant silicon wafers - and solar cells made therefrom for use in space |
| GB2049643B (en) * | 1979-05-30 | 1983-07-20 | Siemens Ag | Process for the production of silicon having semiconducting proprties |
| US4603471A (en) * | 1984-09-06 | 1986-08-05 | Fairchild Semiconductor Corporation | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions |
| US4728998A (en) * | 1984-09-06 | 1988-03-01 | Fairchild Semiconductor Corporation | CMOS circuit having a reduced tendency to latch |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1425709A (fr) * | 1964-02-27 | 1966-01-24 | Matsushita Electronics Corp | Procédé de fabrication de dispositifs à semi-conducteur |
-
1970
- 1970-03-26 DE DE19702014903 patent/DE2014903B2/de not_active Withdrawn
- 1970-03-26 GB GB04771/70A patent/GB1277988A/en not_active Expired
- 1970-03-27 FR FR7011131A patent/FR2037280B1/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1425709A (fr) * | 1964-02-27 | 1966-01-24 | Matsushita Electronics Corp | Procédé de fabrication de dispositifs à semi-conducteur |
Non-Patent Citations (3)
| Title |
|---|
| *REVUE AMERICAINE : "JOURNAL OF THE ELECTROCHEMICAL SOCIETY" VOLUME 116, NO 1 JANVIER 1969 : "STRAIN COMPENSATION IN SILICON BY DIFFUSED IMPURITIES" T.H. YEH ET AL PAGES 73 A 77 * |
| PAGES 860-865 * |
| REVUE AMERICAINE : "JOURNAL OF THE ELECTROCHEMICAL SOCIETY" VOLUME 115, NO 8, AOUT 1968 "BEHAVIOR OF DISLOCATIONS IN SILICON SEMICONDUCTOR DEVICES : DIFFUSION ELECTRICAL" J.E. LAWRENCE * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1277988A (en) | 1972-06-14 |
| DE2014903B2 (de) | 1973-06-28 |
| DE2014903A1 (de) | 1970-10-01 |
| FR2037280B1 (cg-RX-API-DMAC10.html) | 1974-10-11 |