FR2030781A6 - Process for manufacturing integrated semiconductor circuits and circuits thus obtained - Google Patents
Process for manufacturing integrated semiconductor circuits and circuits thus obtainedInfo
- Publication number
- FR2030781A6 FR2030781A6 FR6942177A FR6942177A FR2030781A6 FR 2030781 A6 FR2030781 A6 FR 2030781A6 FR 6942177 A FR6942177 A FR 6942177A FR 6942177 A FR6942177 A FR 6942177A FR 2030781 A6 FR2030781 A6 FR 2030781A6
- Authority
- FR
- France
- Prior art keywords
- circuits
- integrated semiconductor
- manufacturing integrated
- semiconductor circuits
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7803267 | 1967-12-05 | ||
JP7912968A JPS4914111B1 (en) | 1968-10-30 | 1968-10-30 | |
JP7913068A JPS4826180B1 (en) | 1968-10-30 | 1968-10-30 | |
JP43089227A JPS4912795B1 (en) | 1968-12-05 | 1968-12-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2030781A6 true FR2030781A6 (en) | 1970-11-13 |
Family
ID=39736877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6942177A Expired FR2030781A6 (en) | 1967-12-05 | 1969-12-05 | Process for manufacturing integrated semiconductor circuits and circuits thus obtained |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2030781A6 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2284189A1 (en) * | 1974-09-03 | 1976-04-02 | Radiotechnique Compelec | Forming polycrystalline areas on substrate - using laser or electron beam preparing areas for epitaxial deposition |
-
1969
- 1969-12-05 FR FR6942177A patent/FR2030781A6/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2284189A1 (en) * | 1974-09-03 | 1976-04-02 | Radiotechnique Compelec | Forming polycrystalline areas on substrate - using laser or electron beam preparing areas for epitaxial deposition |
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