FR2024331A7 - - Google Patents

Info

Publication number
FR2024331A7
FR2024331A7 FR6940443A FR6940443A FR2024331A7 FR 2024331 A7 FR2024331 A7 FR 2024331A7 FR 6940443 A FR6940443 A FR 6940443A FR 6940443 A FR6940443 A FR 6940443A FR 2024331 A7 FR2024331 A7 FR 2024331A7
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6940443A
Other versions
FR2024331B3 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken AG
Original Assignee
Telefunken AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken AG filed Critical Telefunken AG
Publication of FR2024331A7 publication Critical patent/FR2024331A7/fr
Application granted granted Critical
Publication of FR2024331B3 publication Critical patent/FR2024331B3/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
FR696940443A 1968-11-27 1969-11-24 Expired FR2024331B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681811136 DE1811136A1 (de) 1968-11-27 1968-11-27 Verfahren zum Herstellen eines Planartransistors

Publications (2)

Publication Number Publication Date
FR2024331A7 true FR2024331A7 (fr) 1970-08-28
FR2024331B3 FR2024331B3 (fr) 1973-03-16

Family

ID=5714435

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696940443A Expired FR2024331B3 (fr) 1968-11-27 1969-11-24

Country Status (4)

Country Link
US (1) US3698077A (fr)
DE (1) DE1811136A1 (fr)
FR (1) FR2024331B3 (fr)
GB (1) GB1287473A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2627307A1 (de) * 1975-06-30 1977-01-20 Philips Nv Halbleiteranordnung und verfahren zu deren herstellung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1357515A (en) * 1972-03-10 1974-06-26 Matsushita Electronics Corp Method for manufacturing an mos integrated circuit
US3910804A (en) * 1973-07-02 1975-10-07 Ampex Manufacturing method for self-aligned mos transistor
US4079505A (en) * 1974-03-14 1978-03-21 Fujitsu Limited Method for manufacturing a transistor
US4125933A (en) * 1976-07-08 1978-11-21 Burroughs Corporation IGFET Integrated circuit memory cell
US5010034A (en) * 1989-03-07 1991-04-23 National Semiconductor Corporation CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
JPH08195399A (ja) * 1994-09-22 1996-07-30 Texas Instr Inc <Ti> 埋込み層を必要としない絶縁された垂直ｐｎｐトランジスタ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3397449A (en) * 1965-07-14 1968-08-20 Hughes Aircraft Co Making p-nu junction under glass
JPS556287B1 (fr) * 1966-04-27 1980-02-15
JPS5139075B1 (fr) * 1966-09-22 1976-10-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2627307A1 (de) * 1975-06-30 1977-01-20 Philips Nv Halbleiteranordnung und verfahren zu deren herstellung

Also Published As

Publication number Publication date
GB1287473A (en) 1972-08-31
DE1811136A1 (de) 1970-11-05
FR2024331B3 (fr) 1973-03-16
US3698077A (en) 1972-10-17

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