FR2020337A1 - - Google Patents

Info

Publication number
FR2020337A1
FR2020337A1 FR6934706A FR6934706A FR2020337A1 FR 2020337 A1 FR2020337 A1 FR 2020337A1 FR 6934706 A FR6934706 A FR 6934706A FR 6934706 A FR6934706 A FR 6934706A FR 2020337 A1 FR2020337 A1 FR 2020337A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6934706A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2020337A1 publication Critical patent/FR2020337A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR6934706A 1968-10-10 1969-10-10 Withdrawn FR2020337A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76660568A 1968-10-10 1968-10-10

Publications (1)

Publication Number Publication Date
FR2020337A1 true FR2020337A1 (fr) 1970-07-10

Family

ID=25076948

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6934706A Withdrawn FR2020337A1 (fr) 1968-10-10 1969-10-10

Country Status (5)

Country Link
US (1) US3560815A (fr)
CH (1) CH500588A (fr)
DE (1) DE1950478A1 (fr)
FR (1) FR2020337A1 (fr)
NL (1) NL6915167A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161304C (nl) * 1969-07-01 1980-01-15 Philips Nv Halfgeleiderinrichting met een laagvormig gebied en een door een isolerendelaag van het laagvormig gebied gescheiden elektrodelaag, zodat bij het aanleggen van een geschikte potentiaal op de elektrodelaag in het laagvormig gebied een uitputtingszone wordt gevormd.
US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
US3704384A (en) * 1971-03-30 1972-11-28 Ibm Monolithic capacitor structure
BE789501A (fr) * 1971-09-30 1973-03-29 Siemens Ag Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur
US3877053A (en) * 1973-05-07 1975-04-08 Gen Motors Corp Voltage controlled variable area solid state tuning capacitor
US4727406A (en) * 1982-02-12 1988-02-23 Rockwell International Corporation Pre-multiplexed detector array
JP2741255B2 (ja) * 1989-08-18 1998-04-15 株式会社日立製作所 沸騰冷却用伝熱体
US5771148A (en) * 1995-11-17 1998-06-23 Motorola, Inc. Intercalation-based voltage variable capacitor
US5914513A (en) * 1997-06-23 1999-06-22 The Board Of Trustees Of The University Of Illinois Electronically tunable capacitor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL243218A (fr) * 1958-12-24
US2964648A (en) * 1958-12-24 1960-12-13 Bell Telephone Labor Inc Semiconductor capacitor
NL265382A (fr) * 1960-03-08
US3045129A (en) * 1960-12-08 1962-07-17 Bell Telephone Labor Inc Semiconductor tunnel device
US3303059A (en) * 1964-06-29 1967-02-07 Ibm Methods of improving electrical characteristics of semiconductor devices and products so produced
US3454894A (en) * 1965-11-24 1969-07-08 Leeds & Northrup Co Stabilization of drain-electrode current of insulated-gate field-effect transistor
US3401349A (en) * 1966-11-02 1968-09-10 Rca Corp Wide band high frequency amplifier

Also Published As

Publication number Publication date
DE1950478A1 (de) 1970-04-23
US3560815A (en) 1971-02-02
NL6915167A (fr) 1970-04-14
CH500588A (de) 1970-12-15

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Legal Events

Date Code Title Description
ST Notification of lapse