FR2014135A1 - - Google Patents

Info

Publication number
FR2014135A1
FR2014135A1 FR6909769A FR6909769A FR2014135A1 FR 2014135 A1 FR2014135 A1 FR 2014135A1 FR 6909769 A FR6909769 A FR 6909769A FR 6909769 A FR6909769 A FR 6909769A FR 2014135 A1 FR2014135 A1 FR 2014135A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6909769A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2014135A1 publication Critical patent/FR2014135A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
FR6909769A 1968-05-22 1969-03-28 Withdrawn FR2014135A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73110668A 1968-05-22 1968-05-22

Publications (1)

Publication Number Publication Date
FR2014135A1 true FR2014135A1 (fr) 1970-04-17

Family

ID=24938087

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6909769A Withdrawn FR2014135A1 (fr) 1968-05-22 1969-03-28

Country Status (2)

Country Link
US (1) US3551115A (fr)
FR (1) FR2014135A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0135676A2 (fr) * 1983-06-30 1985-04-03 International Business Machines Corporation Appareil pour croissance de cristaux par la méthode Czochralski et méthode de croissance utilisant cet appareil

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
US3961905A (en) * 1974-02-25 1976-06-08 Corning Glass Works Crucible and heater assembly for crystal growth from a melt
US3935412A (en) * 1974-05-22 1976-01-27 Applied Materials, Inc. Induction heated vapor source
US4016389A (en) * 1975-02-21 1977-04-05 White Gerald W High rate ion plating source
SU748918A1 (ru) * 1977-12-26 1980-07-15 Московский Ордена Ленина Энергетический Институт Устройство дл индукционного нагрева
US4293755A (en) * 1978-10-23 1981-10-06 General Instrument Corporation Method of cooling induction-heated vapor deposition apparatus and cooling apparatus therefor
US4795885A (en) * 1986-05-16 1989-01-03 Westinghouse Electric Corp. Flexible radiant tube heater
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
US4791261A (en) * 1987-09-23 1988-12-13 International Business Machines Corporation Crucible for evaporation of metallic film
US4931610A (en) * 1989-06-08 1990-06-05 Hughes William L Induction heated rotary kiln
DE19612586A1 (de) * 1996-03-29 1997-10-02 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
US7755009B2 (en) * 2007-02-12 2010-07-13 Bernard Lasko Compounding thermoplastic materials in-situ
US8535441B2 (en) * 2010-08-03 2013-09-17 Siemens Medical Solutions Usa, Inc. Crystal growth crucible lid
JP5630301B2 (ja) * 2011-02-07 2014-11-26 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
JP5782996B2 (ja) * 2011-11-01 2015-09-24 信越半導体株式会社 単結晶の製造方法
FR3011711B1 (fr) * 2013-10-03 2015-12-11 Commissariat Energie Atomique Dispositif pour generer un gradient eleve de temperature dans un echantillon de type combustible nucleaire

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0135676A2 (fr) * 1983-06-30 1985-04-03 International Business Machines Corporation Appareil pour croissance de cristaux par la méthode Czochralski et méthode de croissance utilisant cet appareil
EP0135676A3 (fr) * 1983-06-30 1989-02-01 International Business Machines Corporation Appareil pour croissance de cristaux par la méthode Czochralski et méthode de croissance utilisant cet appareil

Also Published As

Publication number Publication date
US3551115A (en) 1970-12-29

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Legal Events

Date Code Title Description
ST Notification of lapse