FR2012977A7 - - Google Patents
Info
- Publication number
- FR2012977A7 FR2012977A7 FR6923762A FR6923762A FR2012977A7 FR 2012977 A7 FR2012977 A7 FR 2012977A7 FR 6923762 A FR6923762 A FR 6923762A FR 6923762 A FR6923762 A FR 6923762A FR 2012977 A7 FR2012977 A7 FR 2012977A7
- Authority
- FR
- France
- Prior art keywords
- groove
- region
- regions
- junction
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1055368A CH485324A (de) | 1968-07-15 | 1968-07-15 | Halbleiterelement |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2012977A7 true FR2012977A7 (ja) | 1970-03-27 |
Family
ID=4364431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6923762A Expired FR2012977A7 (ja) | 1968-07-15 | 1969-07-11 |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT278907B (ja) |
CH (1) | CH485324A (ja) |
DE (2) | DE6922591U (ja) |
FR (1) | FR2012977A7 (ja) |
GB (1) | GB1220315A (ja) |
NL (1) | NL6812691A (ja) |
SE (1) | SE354381B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60250670A (ja) * | 1984-05-25 | 1985-12-11 | Mitsubishi Electric Corp | 半導体装置 |
DE10326578B4 (de) | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
-
1968
- 1968-07-15 CH CH1055368A patent/CH485324A/de not_active IP Right Cessation
- 1968-08-08 AT AT777368A patent/AT278907B/de not_active IP Right Cessation
- 1968-09-05 NL NL6812691A patent/NL6812691A/xx unknown
-
1969
- 1969-06-06 DE DE6922591U patent/DE6922591U/de not_active Expired
- 1969-06-06 DE DE19691928787 patent/DE1928787A1/de active Pending
- 1969-07-11 FR FR6923762A patent/FR2012977A7/fr not_active Expired
- 1969-07-14 SE SE09954/69A patent/SE354381B/xx unknown
- 1969-07-14 GB GB35239/69A patent/GB1220315A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH485324A (de) | 1970-01-31 |
SE354381B (ja) | 1973-03-05 |
DE1928787A1 (de) | 1970-11-12 |
AT278907B (de) | 1970-02-25 |
NL6812691A (ja) | 1970-01-19 |
GB1220315A (en) | 1971-01-27 |
DE6922591U (de) | 1971-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |