FR2012977A7 - - Google Patents

Info

Publication number
FR2012977A7
FR2012977A7 FR6923762A FR6923762A FR2012977A7 FR 2012977 A7 FR2012977 A7 FR 2012977A7 FR 6923762 A FR6923762 A FR 6923762A FR 6923762 A FR6923762 A FR 6923762A FR 2012977 A7 FR2012977 A7 FR 2012977A7
Authority
FR
France
Prior art keywords
groove
region
regions
junction
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6923762A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Original Assignee
Brown Boveri und Cie AG Switzerland
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brown Boveri und Cie AG Switzerland, BBC Brown Boveri France SA filed Critical Brown Boveri und Cie AG Switzerland
Application granted granted Critical
Publication of FR2012977A7 publication Critical patent/FR2012977A7/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR6923762A 1968-07-15 1969-07-11 Expired FR2012977A7 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1055368A CH485324A (de) 1968-07-15 1968-07-15 Halbleiterelement

Publications (1)

Publication Number Publication Date
FR2012977A7 true FR2012977A7 (ja) 1970-03-27

Family

ID=4364431

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6923762A Expired FR2012977A7 (ja) 1968-07-15 1969-07-11

Country Status (7)

Country Link
AT (1) AT278907B (ja)
CH (1) CH485324A (ja)
DE (2) DE6922591U (ja)
FR (1) FR2012977A7 (ja)
GB (1) GB1220315A (ja)
NL (1) NL6812691A (ja)
SE (1) SE354381B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置
DE10326578B4 (de) 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe

Also Published As

Publication number Publication date
CH485324A (de) 1970-01-31
SE354381B (ja) 1973-03-05
DE1928787A1 (de) 1970-11-12
AT278907B (de) 1970-02-25
NL6812691A (ja) 1970-01-19
GB1220315A (en) 1971-01-27
DE6922591U (de) 1971-03-18

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Legal Events

Date Code Title Description
ST Notification of lapse