FR2011965B1 - - Google Patents

Info

Publication number
FR2011965B1
FR2011965B1 FR696920352A FR6920352A FR2011965B1 FR 2011965 B1 FR2011965 B1 FR 2011965B1 FR 696920352 A FR696920352 A FR 696920352A FR 6920352 A FR6920352 A FR 6920352A FR 2011965 B1 FR2011965 B1 FR 2011965B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR696920352A
Other versions
FR2011965A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2011965A1 publication Critical patent/FR2011965A1/fr
Application granted granted Critical
Publication of FR2011965B1 publication Critical patent/FR2011965B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B60VEHICLES IN GENERAL
    • B60PVEHICLES ADAPTED FOR LOAD TRANSPORTATION OR TO TRANSPORT, TO CARRY, OR TO COMPRISE SPECIAL LOADS OR OBJECTS
    • B60P1/00Vehicles predominantly for transporting loads and modified to facilitate loading, consolidating the load, or unloading
    • B60P1/04Vehicles predominantly for transporting loads and modified to facilitate loading, consolidating the load, or unloading with a tipping movement of load-transporting element
    • B60P1/16Vehicles predominantly for transporting loads and modified to facilitate loading, consolidating the load, or unloading with a tipping movement of load-transporting element actuated by fluid-operated mechanisms
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/04Dopants, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/041Doping control in crystal growth
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR696920352A 1968-06-21 1969-06-18 Expired FR2011965B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5304368 1968-06-21

Publications (2)

Publication Number Publication Date
FR2011965A1 FR2011965A1 (fr) 1970-03-13
FR2011965B1 true FR2011965B1 (fr) 1973-08-10

Family

ID=12931841

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696920352A Expired FR2011965B1 (fr) 1968-06-21 1969-06-18

Country Status (5)

Country Link
US (1) US3615945A (fr)
DE (1) DE1931417C3 (fr)
FR (1) FR2011965B1 (fr)
GB (1) GB1199399A (fr)
NL (1) NL150620B (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3798084A (en) * 1972-08-11 1974-03-19 Ibm Simultaneous diffusion processing
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US3920882A (en) * 1973-04-16 1975-11-18 Owens Illinois Inc N-type dopant source
US3914138A (en) * 1974-08-16 1975-10-21 Westinghouse Electric Corp Method of making semiconductor devices by single step diffusion
US4099997A (en) * 1976-06-21 1978-07-11 Rca Corporation Method of fabricating a semiconductor device
US4029528A (en) * 1976-08-30 1977-06-14 Rca Corporation Method of selectively doping a semiconductor body
JPS5431273A (en) * 1977-08-15 1979-03-08 Hitachi Ltd Manufacture of semiconductor device
US4235650A (en) * 1978-09-05 1980-11-25 General Electric Company Open tube aluminum diffusion
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
DE3028346A1 (de) * 1980-07-25 1982-03-18 Josef 8221 Inzell Plereiter Kipperfahrzeug mit raupenfahrwerk
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
DE3782608D1 (de) * 1986-09-30 1992-12-17 Siemens Ag Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper.
JP3518745B2 (ja) * 2000-06-26 2004-04-12 日立金属株式会社 複合蒸着材およびその製造方法

Also Published As

Publication number Publication date
DE1931417C3 (de) 1973-09-27
GB1199399A (en) 1970-07-22
NL6909457A (fr) 1969-12-23
FR2011965A1 (fr) 1970-03-13
NL150620B (nl) 1976-08-16
DE1931417B2 (de) 1973-03-08
US3615945A (en) 1971-10-26
DE1931417A1 (de) 1970-01-08

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