FR2009082B1 - - Google Patents

Info

Publication number
FR2009082B1
FR2009082B1 FR6916450A FR6916450A FR2009082B1 FR 2009082 B1 FR2009082 B1 FR 2009082B1 FR 6916450 A FR6916450 A FR 6916450A FR 6916450 A FR6916450 A FR 6916450A FR 2009082 B1 FR2009082 B1 FR 2009082B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6916450A
Other versions
FR2009082A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Electronics Inc
Original Assignee
National Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Electronics Inc filed Critical National Electronics Inc
Publication of FR2009082A1 publication Critical patent/FR2009082A1/fr
Application granted granted Critical
Publication of FR2009082B1 publication Critical patent/FR2009082B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR6916450A 1968-05-22 1969-05-21 Expired FR2009082B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73119368A 1968-05-22 1968-05-22

Publications (2)

Publication Number Publication Date
FR2009082A1 FR2009082A1 (fr) 1970-01-30
FR2009082B1 true FR2009082B1 (fr) 1975-03-21

Family

ID=24938468

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6916450A Expired FR2009082B1 (fr) 1968-05-22 1969-05-21

Country Status (7)

Country Link
US (1) US3486088A (fr)
JP (1) JPS5022400B1 (fr)
CH (1) CH509667A (fr)
DE (1) DE1925765C3 (fr)
FR (1) FR2009082B1 (fr)
GB (1) GB1245674A (fr)
NL (1) NL167550C (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700982A (en) * 1968-08-12 1972-10-24 Int Rectifier Corp Controlled rectifier having gate electrode which extends across the gate and cathode layers
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
US3662250A (en) * 1970-11-12 1972-05-09 Gen Electric Thyristor overvoltage protective circuit
US3688164A (en) * 1969-10-01 1972-08-29 Hitachi Ltd Multi-layer-type switch device
BE759754A (fr) * 1969-12-02 1971-05-17 Licentia Gmbh Thyristor avec emetteur court-circuite a l'une des faces principales aumoins du disque de thyristor et procede de production du thyristor
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion
US3740584A (en) * 1971-06-08 1973-06-19 Gen Electric High arrangement frequency scr gating
BE787597A (fr) * 1971-08-16 1973-02-16 Siemens Ag Thyristor
FR2254880B1 (fr) * 1973-12-12 1978-11-10 Alsthom Cgee
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
CH630491A5 (de) * 1978-06-15 1982-06-15 Bbc Brown Boveri & Cie Leistungsthyristor, verfahren zu seiner herstellung und verwendung derartiger thyristoren in stromrichterschaltungen.
JPS5739574A (en) * 1980-08-22 1982-03-04 Toshiba Corp Semiconductor device
DE3112941A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit innerer stromverstaerkung und verfahren zu seinem betrieb
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
US4646122A (en) * 1983-03-11 1987-02-24 Hitachi, Ltd. Semiconductor device with floating remote gate turn-off means
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
US4651189A (en) * 1983-12-19 1987-03-17 Hitachi, Ltd. Semiconductor device provided with electrically floating control electrode
DE3905418A1 (de) * 1989-02-22 1990-08-23 Telefunken Electronic Gmbh Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL129185C (fr) * 1960-06-10
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
US3403309A (en) * 1965-10-23 1968-09-24 Westinghouse Electric Corp High-speed semiconductor switch

Also Published As

Publication number Publication date
NL6907817A (fr) 1969-11-25
NL167550C (nl) 1981-12-16
US3486088A (en) 1969-12-23
DE1925765B2 (de) 1973-10-25
CH509667A (de) 1971-06-30
JPS5022400B1 (fr) 1975-07-30
DE1925765C3 (de) 1974-05-22
DE1925765A1 (de) 1970-09-24
GB1245674A (en) 1971-09-08
NL167550B (nl) 1981-07-16
FR2009082A1 (fr) 1970-01-30

Similar Documents

Publication Publication Date Title
AU1946070A (fr)
AU428130B2 (fr)
FR2009082B1 (fr)
AU2374870A (fr)
AU6168869A (fr)
AU6171569A (fr)
AU429879B2 (fr)
AU416157B2 (fr)
AU2581067A (fr)
AU4811568A (fr)
AU421558B1 (fr)
AU2580267A (fr)
AU3224368A (fr)
AU4744468A (fr)
AR203075Q (fr)
AU3789668A (fr)
AU4270368A (fr)
BE728660A (fr)
BE727250A (fr)
BE727748A (fr)
BE726680A (fr)
BE726239A (fr)
BE725398A (fr)
BE725122A (fr)
BE725113A (fr)

Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse