FR2006066A1 - - Google Patents

Info

Publication number
FR2006066A1
FR2006066A1 FR6911131A FR6911131A FR2006066A1 FR 2006066 A1 FR2006066 A1 FR 2006066A1 FR 6911131 A FR6911131 A FR 6911131A FR 6911131 A FR6911131 A FR 6911131A FR 2006066 A1 FR2006066 A1 FR 2006066A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6911131A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of FR2006066A1 publication Critical patent/FR2006066A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
FR6911131A 1968-04-11 1969-04-10 Withdrawn FR2006066A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72057468A 1968-04-11 1968-04-11

Publications (1)

Publication Number Publication Date
FR2006066A1 true FR2006066A1 (fr) 1969-12-19

Family

ID=24894498

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6911131A Withdrawn FR2006066A1 (fr) 1968-04-11 1969-04-10

Country Status (5)

Country Link
US (1) US3571672A (fr)
DE (1) DE1918314A1 (fr)
FR (1) FR2006066A1 (fr)
NL (1) NL6905538A (fr)
SE (1) SE338088B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980505A (en) * 1973-09-12 1976-09-14 Buckley William D Process of making a filament-type memory semiconductor device
EP0072221B1 (fr) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Dispositif de mémoire non volatile électriquement programmable
EP0095283A3 (fr) * 1982-05-15 1984-12-27 The British Petroleum Company p.l.c. Dispositif de mémoire
US10374009B1 (en) 2018-07-17 2019-08-06 Macronix International Co., Ltd. Te-free AsSeGe chalcogenides for selector devices and memory devices using same
US11289540B2 (en) 2019-10-15 2022-03-29 Macronix International Co., Ltd. Semiconductor device and memory cell
US11158787B2 (en) 2019-12-17 2021-10-26 Macronix International Co., Ltd. C—As—Se—Ge ovonic materials for selector devices and memory devices using same
US11362276B2 (en) 2020-03-27 2022-06-14 Macronix International Co., Ltd. High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2399266A (en) * 1944-08-21 1946-04-30 Raytheon Mfg Co Voltage regulator

Also Published As

Publication number Publication date
DE1918314A1 (de) 1969-10-23
SE338088B (fr) 1971-08-30
NL6905538A (fr) 1969-10-14
US3571672A (en) 1971-03-23

Similar Documents

Publication Publication Date Title
AU1946070A (fr)
AU2374870A (fr)
FR2016174B1 (fr)
FR2006064A1 (fr)
FR2003160A1 (fr)
FR2006065A1 (fr)
AU2952567A (fr)
AU2581067A (fr)
AU2580267A (fr)
AR203075Q (fr)
BE727789A (fr)
SE338088B (fr)
BE727739A (fr)
BE727343A (fr)
BE727134A (fr)
BE727130A (fr)
BE726499A (fr)
BE727890A (fr)
BE728000A (fr)
BE726472A (fr)
BE725197A (fr)
BE722799A (fr)
BE717637A (fr)
BE709496A (fr)
BE581157A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse