SE338088B - - Google Patents
Info
- Publication number
- SE338088B SE338088B SE05047/69A SE504769A SE338088B SE 338088 B SE338088 B SE 338088B SE 05047/69 A SE05047/69 A SE 05047/69A SE 504769 A SE504769 A SE 504769A SE 338088 B SE338088 B SE 338088B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72057468A | 1968-04-11 | 1968-04-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE338088B true SE338088B (xx) | 1971-08-30 |
Family
ID=24894498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE05047/69A SE338088B (xx) | 1968-04-11 | 1969-04-10 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3571672A (xx) |
DE (1) | DE1918314A1 (xx) |
FR (1) | FR2006066A1 (xx) |
NL (1) | NL6905538A (xx) |
SE (1) | SE338088B (xx) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3980505A (en) * | 1973-09-12 | 1976-09-14 | Buckley William D | Process of making a filament-type memory semiconductor device |
JPS5890790A (ja) * | 1981-08-07 | 1983-05-30 | ザ ブリテイッシュ ペトロレアム カンパニ− ピ−.エル.シ− | 半導体装置 |
EP0095283A3 (en) * | 1982-05-15 | 1984-12-27 | The British Petroleum Company p.l.c. | Memory device |
US10374009B1 (en) | 2018-07-17 | 2019-08-06 | Macronix International Co., Ltd. | Te-free AsSeGe chalcogenides for selector devices and memory devices using same |
US11289540B2 (en) | 2019-10-15 | 2022-03-29 | Macronix International Co., Ltd. | Semiconductor device and memory cell |
US11158787B2 (en) | 2019-12-17 | 2021-10-26 | Macronix International Co., Ltd. | C—As—Se—Ge ovonic materials for selector devices and memory devices using same |
US11362276B2 (en) | 2020-03-27 | 2022-06-14 | Macronix International Co., Ltd. | High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2399266A (en) * | 1944-08-21 | 1946-04-30 | Raytheon Mfg Co | Voltage regulator |
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1968
- 1968-04-11 US US720574A patent/US3571672A/en not_active Expired - Lifetime
-
1969
- 1969-04-10 NL NL6905538A patent/NL6905538A/xx unknown
- 1969-04-10 DE DE19691918314 patent/DE1918314A1/de active Pending
- 1969-04-10 FR FR6911131A patent/FR2006066A1/fr not_active Withdrawn
- 1969-04-10 SE SE05047/69A patent/SE338088B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2006066A1 (xx) | 1969-12-19 |
DE1918314A1 (de) | 1969-10-23 |
US3571672A (en) | 1971-03-23 |
NL6905538A (xx) | 1969-10-14 |