FR2004645A1 - - Google Patents

Info

Publication number
FR2004645A1
FR2004645A1 FR6908450A FR6908450A FR2004645A1 FR 2004645 A1 FR2004645 A1 FR 2004645A1 FR 6908450 A FR6908450 A FR 6908450A FR 6908450 A FR6908450 A FR 6908450A FR 2004645 A1 FR2004645 A1 FR 2004645A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6908450A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1985168A external-priority patent/JPS547959B1/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2004645A1 publication Critical patent/FR2004645A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/085—Vapour deposited
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H01G4/0085—Fried electrodes
FR6908450A 1968-03-25 1969-03-21 Withdrawn FR2004645A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1985168A JPS547959B1 (fr) 1968-03-25 1968-03-25
JP6639068 1968-09-13
JP6639168 1968-09-13
JP6638968 1968-09-13

Publications (1)

Publication Number Publication Date
FR2004645A1 true FR2004645A1 (fr) 1969-11-28

Family

ID=27457262

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6908450A Withdrawn FR2004645A1 (fr) 1968-03-25 1969-03-21

Country Status (4)

Country Link
US (1) US3579063A (fr)
FR (1) FR2004645A1 (fr)
GB (1) GB1262319A (fr)
NL (1) NL146323B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064780A1 (fr) * 1981-05-07 1982-11-17 Maurice Hakoune Procédé de traitement d'une pierre précieuse et pierre précieuse ainsi traitée

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699409A (en) * 1971-09-30 1972-10-17 Gte Laboratories Inc Solid state device having dielectric and semiconductor films sandwiched between electrodes
JPH01225149A (ja) * 1988-03-04 1989-09-08 Toshiba Corp キャパシタ及びその製造方法
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US5168420A (en) * 1990-11-20 1992-12-01 Bell Communications Research, Inc. Ferroelectrics epitaxially grown on superconducting substrates
US5142437A (en) * 1991-06-13 1992-08-25 Ramtron Corporation Conducting electrode layers for ferroelectric capacitors in integrated circuits and method
US5191510A (en) * 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
US5933316A (en) * 1993-08-02 1999-08-03 Motorola Inc. Method for forming a titanate thin film on silicon, and device formed thereby
US5872696A (en) * 1997-04-09 1999-02-16 Fujitsu Limited Sputtered and anodized capacitors capable of withstanding exposure to high temperatures
US6287673B1 (en) * 1998-03-03 2001-09-11 Acktar Ltd. Method for producing high surface area foil electrodes
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3066247A (en) * 1954-08-25 1962-11-27 Sprague Electric Co Electrical capacitors
US3365626A (en) * 1960-10-19 1968-01-23 Gen Electric Electrical capacitor
US3376481A (en) * 1966-10-31 1968-04-02 Bell Telephone Labor Inc Thin film capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064780A1 (fr) * 1981-05-07 1982-11-17 Maurice Hakoune Procédé de traitement d'une pierre précieuse et pierre précieuse ainsi traitée

Also Published As

Publication number Publication date
NL146323B (nl) 1975-06-16
NL6904423A (fr) 1969-09-29
GB1262319A (en) 1972-02-02
US3579063A (en) 1971-05-18
DE1915322A1 (de) 1969-10-23
DE1915322B2 (de) 1972-11-30

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Legal Events

Date Code Title Description
ST Notification of lapse