FR2001094A1 - - Google Patents

Info

Publication number
FR2001094A1
FR2001094A1 FR6901519A FR6901519A FR2001094A1 FR 2001094 A1 FR2001094 A1 FR 2001094A1 FR 6901519 A FR6901519 A FR 6901519A FR 6901519 A FR6901519 A FR 6901519A FR 2001094 A1 FR2001094 A1 FR 2001094A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6901519A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of FR2001094A1 publication Critical patent/FR2001094A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/027—Graded interfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR6901519A 1968-02-01 1969-01-27 Withdrawn FR2001094A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70228468A 1968-02-01 1968-02-01

Publications (1)

Publication Number Publication Date
FR2001094A1 true FR2001094A1 (fr) 1969-09-26

Family

ID=24820578

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6901519A Withdrawn FR2001094A1 (fr) 1968-02-01 1969-01-27

Country Status (4)

Country Link
US (1) US3515663A (fr)
DE (1) DE1904626A1 (fr)
FR (1) FR2001094A1 (fr)
GB (2) GB1244619A (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664948A (en) * 1969-11-19 1972-05-23 Texas Instruments Inc Sputtering system
US3986944A (en) * 1975-06-27 1976-10-19 Honeywell Information Systems, Inc. Method for obtaining adhesion of multilayer thin films
US4389295A (en) * 1982-05-06 1983-06-21 Gte Products Corporation Thin film phosphor sputtering process
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
GB8921666D0 (en) * 1989-09-26 1989-11-08 Peatgrange Ivd Limited Ion vapour deposition apparatus and method
KR950009939B1 (ko) * 1990-11-30 1995-09-01 가부시끼가이샤 히다찌세이사꾸쇼 박막 형성 방법 및 그에 의해 형성된 반도체 장치
US6429120B1 (en) * 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US6328856B1 (en) 1999-08-04 2001-12-11 Seagate Technology Llc Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device
US7262130B1 (en) * 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6420262B1 (en) * 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US6376370B1 (en) * 2000-01-18 2002-04-23 Micron Technology, Inc. Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
GB0222331D0 (en) * 2002-09-26 2002-10-30 Teer Coatings Ltd A method for depositing multilayer coatings with controlled thickness

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305473A (en) * 1964-08-20 1967-02-21 Cons Vacuum Corp Triode sputtering apparatus for depositing uniform coatings
US3369990A (en) * 1964-12-31 1968-02-20 Ibm Cathodic sputtering apparatus including thermionic means for increasing sputtering efficiency
US3464907A (en) * 1967-02-23 1969-09-02 Victory Eng Corp Triode sputtering apparatus and method using synchronized pulsating current

Also Published As

Publication number Publication date
US3515663A (en) 1970-06-02
GB1244619A (en) 1971-09-02
GB1244618A (en) 1971-09-02
DE1904626A1 (de) 1969-09-04

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Legal Events

Date Code Title Description
ST Notification of lapse