FR2000657A1 - - Google Patents

Info

Publication number
FR2000657A1
FR2000657A1 FR6901266A FR6901266A FR2000657A1 FR 2000657 A1 FR2000657 A1 FR 2000657A1 FR 6901266 A FR6901266 A FR 6901266A FR 6901266 A FR6901266 A FR 6901266A FR 2000657 A1 FR2000657 A1 FR 2000657A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6901266A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1968006635U external-priority patent/JPS4620485Y1/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2000657A1 publication Critical patent/FR2000657A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H10W74/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W72/90—
    • H10W72/5363—
    • H10W72/59—
FR6901266A 1968-01-24 1969-01-23 Withdrawn FR2000657A1 (index.php)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP376268 1968-01-24
JP1968006635U JPS4620485Y1 (index.php) 1968-02-02 1968-02-02

Publications (1)

Publication Number Publication Date
FR2000657A1 true FR2000657A1 (index.php) 1969-09-12

Family

ID=26337401

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6901266A Withdrawn FR2000657A1 (index.php) 1968-01-24 1969-01-23

Country Status (4)

Country Link
DE (1) DE1903342B2 (index.php)
FR (1) FR2000657A1 (index.php)
GB (1) GB1202515A (index.php)
NL (1) NL6901059A (index.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767981A (en) * 1971-06-04 1973-10-23 Signetics Corp High voltage planar diode structure and method
US5700715A (en) * 1994-06-14 1997-12-23 Lsi Logic Corporation Process for mounting a semiconductor device to a circuit substrate

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511396B1 (index.php) * 1970-09-07 1976-01-16
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
DE2503864C3 (de) * 1975-01-30 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
GB2097581A (en) * 1981-04-24 1982-11-03 Hitachi Ltd Shielding semiconductor integrated circuit devices from light
JPS5984542A (ja) * 1982-11-08 1984-05-16 Nec Corp 高周波半導体集積回路
US5432127A (en) * 1989-06-30 1995-07-11 Texas Instruments Incorporated Method for making a balanced capacitance lead frame for integrated circuits having a power bus and dummy leads

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1419107A (fr) * 1964-02-04 1965-11-26 Fairchild Camera Instr Co Réglage équipotentiel des caractéristiques de surface d'un semi-conducteur

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1419107A (fr) * 1964-02-04 1965-11-26 Fairchild Camera Instr Co Réglage équipotentiel des caractéristiques de surface d'un semi-conducteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE FRANCAISE "L'ONDE ELECTRIQUE VOL. 47 MARS-AVRIL 1967 "LES TRANSISTORS PLANS AU SILICIUM A PROTECTION METALLIQUE P. 358-367 R. CARTON E. TONNEL) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767981A (en) * 1971-06-04 1973-10-23 Signetics Corp High voltage planar diode structure and method
US5700715A (en) * 1994-06-14 1997-12-23 Lsi Logic Corporation Process for mounting a semiconductor device to a circuit substrate

Also Published As

Publication number Publication date
NL6901059A (index.php) 1969-07-28
DE1903342A1 (de) 1969-09-11
GB1202515A (en) 1970-08-19
DE1903342B2 (de) 1971-05-13

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Legal Events

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