FR1573470A - - Google Patents
Info
- Publication number
- FR1573470A FR1573470A FR1573470DA FR1573470A FR 1573470 A FR1573470 A FR 1573470A FR 1573470D A FR1573470D A FR 1573470DA FR 1573470 A FR1573470 A FR 1573470A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1967S0110710 DE1644012B2 (de) | 1967-05-07 | 1967-05-07 | Verfahren zum eindiffundieren von dotierungsstoff aus der gasphase in eine lokal mit einer siliciumnitridschicht maskierte halbleiteroberflaeche |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1573470A true FR1573470A (https=) | 1969-07-04 |
Family
ID=7530433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1573470D Expired FR1573470A (https=) | 1967-05-07 | 1968-07-04 |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT292786B (https=) |
| CH (1) | CH484700A (https=) |
| DE (1) | DE1644012B2 (https=) |
| FR (1) | FR1573470A (https=) |
| GB (1) | GB1234665A (https=) |
| NL (1) | NL6809330A (https=) |
| SE (1) | SE337361B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2675824A1 (fr) * | 1991-04-26 | 1992-10-30 | Izrael Alice | Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede. |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2967704D1 (de) * | 1978-06-14 | 1991-06-13 | Fujitsu Ltd | Verfahren zur herstellung einer halbleiteranordnung mit einer isolierschicht. |
| EP0154670B1 (en) * | 1978-06-14 | 1991-05-08 | Fujitsu Limited | Process for producing a semiconductor device having insulating film |
| JPS5621372A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE102015102454A1 (de) * | 2015-02-20 | 2016-08-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Strukturierung einer Nitridschicht, strukturierte Dielektrikumschicht, optoelektronisches Bauelement, Ätzverfahren zum Ätzen von Schichten und Umgebungssensor |
-
1967
- 1967-05-07 DE DE1967S0110710 patent/DE1644012B2/de active Granted
-
1968
- 1968-07-02 NL NL6809330A patent/NL6809330A/xx unknown
- 1968-07-04 FR FR1573470D patent/FR1573470A/fr not_active Expired
- 1968-07-05 AT AT06521/68A patent/AT292786B/de active
- 1968-07-05 GB GB1234665D patent/GB1234665A/en not_active Expired
- 1968-07-05 SE SE09330/68A patent/SE337361B/xx unknown
- 1968-07-05 CH CH1011868A patent/CH484700A/de not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2675824A1 (fr) * | 1991-04-26 | 1992-10-30 | Izrael Alice | Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede. |
| EP0512880A1 (fr) * | 1991-04-26 | 1992-11-11 | France Telecom | Procédé de traitement de la surface gravée d'un corps semi-conducteur ou semi-isolant, circuits intégrés obtenus selon un tel procédé et appareil d'oxydation anodique pour mettre en oeuvre un tel procédé |
| US5296126A (en) * | 1991-04-26 | 1994-03-22 | France Telecom | Method for processing the etched surface of a semiconductive or semi-insulating substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CH484700A (de) | 1970-01-31 |
| GB1234665A (https=) | 1971-06-09 |
| DE1644012B2 (de) | 1976-08-12 |
| NL6809330A (https=) | 1969-01-09 |
| DE1644012A1 (de) | 1970-09-24 |
| SE337361B (https=) | 1971-08-09 |
| AT292786B (de) | 1971-08-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |