FR1569272A - - Google Patents

Info

Publication number
FR1569272A
FR1569272A FR1569272DA FR1569272A FR 1569272 A FR1569272 A FR 1569272A FR 1569272D A FR1569272D A FR 1569272DA FR 1569272 A FR1569272 A FR 1569272A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1569272A publication Critical patent/FR1569272A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR1569272D 1967-06-15 1968-06-14 Expired FR1569272A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64631767A 1967-06-15 1967-06-15

Publications (1)

Publication Number Publication Date
FR1569272A true FR1569272A (en:Method) 1969-05-30

Family

ID=24592587

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1569272D Expired FR1569272A (en:Method) 1967-06-15 1968-06-14

Country Status (4)

Country Link
US (1) US3483446A (en:Method)
BE (1) BE716634A (en:Method)
FR (1) FR1569272A (en:Method)
GB (1) GB1161978A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3659162A (en) * 1968-12-27 1972-04-25 Nippon Electric Co Semiconductor integrated circuit device having improved wiring layer structure
US3758831A (en) * 1971-06-07 1973-09-11 Motorola Inc Transistor with improved breakdown mode
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US5141881A (en) * 1989-04-20 1992-08-25 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit
JPH03238871A (ja) * 1990-02-15 1991-10-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
JP2013149925A (ja) * 2012-01-23 2013-08-01 Toshiba Corp 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2877359A (en) * 1956-04-20 1959-03-10 Bell Telephone Labor Inc Semiconductor signal storage device
GB1047388A (en:Method) * 1962-10-05
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device
US3328651A (en) * 1963-10-29 1967-06-27 Sylvania Electric Prod Semiconductor switching device and method of manufacture
US3335341A (en) * 1964-03-06 1967-08-08 Westinghouse Electric Corp Diode structure in semiconductor integrated circuit and method of making the same
GB1050805A (en:Method) * 1964-06-23 1900-01-01
US3380153A (en) * 1965-09-30 1968-04-30 Westinghouse Electric Corp Method of forming a semiconductor integrated circuit that includes a fast switching transistor

Also Published As

Publication number Publication date
BE716634A (en:Method) 1968-11-04
GB1161978A (en) 1969-08-20
US3483446A (en) 1969-12-09

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Legal Events

Date Code Title Description
ST Notification of lapse